Photodetectors based on band-gap materials

Semiconductor p-n transitions with a band gap Eg are suitable for the detection of optical radiation, pro- 

Ultimately, only one elementary charge q can be created for each incoming photon however, not every incident photon wiU necessarily create a charge carrier. 

Jsc short-circuit current Woe open circuit voltage 

CCD detectors are the truly omnipresent devices these days. They consist of a ID or 2D array of the previously mentioned MOS or similar mini-detectors (an individual detector element is called pixel )- This is the simplest and smallest way to build a digital imaging system with sufficient spatial resolution for most of today s applications arrays of up to 2048 x 2048 pixels (each of size 10 x 10 pm ) are no longer a rare occurrence. 

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