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Pentacene charge injection

Figure 4.3.14 illustrates AO in EFM images for pentacene monolayer islands before any charge injection as a function of The AO-Vgg curve varies as Vppi/ and the curve is slightly shifted by a linear component. From a second-order polynomical fit of the AO-Egg curve, an effective surface charge density of the ordered pentacene island is estimated as 2(X) charges/pm. Conversely, EFM analysis for disordered pentacene islands shows ... [Pg.314]

Heim, T., Lmimouni, K., and VuiUaume, D., Ambipolar charge injection and transport in a single pentacene monolayer island. Nano Lett. 4, 2145-2150, 2004. [Pg.336]

Figure 3.27 Impact of charge injection on the energy level alignment, (a) ELA at pentacene and ClAIPc (dipole layer)/graphite before (A) and after (B) contact (holes are injected to Pn layer) (experimental data in Ref [85]), where AVL is vacuum level shift and energy is given in eV. (b) UPS spectra of HOMO region of the system in (a)-(B), where spectra ofHOPC, ClAIPc/HOPC (A), Pn (0.8ML)/CIAIPc/HOPC (B1 at 300 K, B2 at 110 K, and B3 at 601<), and Pn (3 ML)/ ClAIPc/HOPG at 295 K(C) are shown, (c)... Figure 3.27 Impact of charge injection on the energy level alignment, (a) ELA at pentacene and ClAIPc (dipole layer)/graphite before (A) and after (B) contact (holes are injected to Pn layer) (experimental data in Ref [85]), where AVL is vacuum level shift and energy is given in eV. (b) UPS spectra of HOMO region of the system in (a)-(B), where spectra ofHOPC, ClAIPc/HOPC (A), Pn (0.8ML)/CIAIPc/HOPC (B1 at 300 K, B2 at 110 K, and B3 at 601<), and Pn (3 ML)/ ClAIPc/HOPG at 295 K(C) are shown, (c)...
Bock C, Pham DV, Kunze U, Kafer D, Witte G, Woll C (2006) Improved morphology and charge carrier injection in pentacene field-effect transistors with thiol-treated electrodes. J Appl Phys 100 114517... [Pg.235]

Beside the suppression of charge carrier injection, another possibility is highlighted in the present chapter, which is the adjustment of the charge carrier transport in the OFET channel. It was shown that by a suitable modification of the gate insulator surface transport of one sign can be either completely suppressed or fully activated. For instance, a pentacene OFET based on a SiOa insulator known to be... [Pg.251]

A thin coating of PEDOTrPSS on the Au contact will increase charge carrier injection from Au source contact into the pentacene layer. [Pg.241]


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See also in sourсe #XX -- [ Pg.314 ]




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