Pattern size bias

Fig. 6.10 Pore density versus silicon electrode doping density for PS layers of different size regimes. The broken line shows the pore density of a triangular pore pattern with a pore pitch equal to twice the SCR width for 3 V applied bias. Note that only macropores on n-type substrates may show a pore spac-...

Another change in the electrophoretic pattern of gastric juice, as a result of peptic digestion, was the marked decrease in size of the protein component localized about 1 cm toward the anode from the origin. This parallels findings obtained under similar conditions vith other techniques, i.e., decrease or disappearance of component B on starch block electrophoresis (K7), of component M4 on horizontal paper electrophoresis (B13), and of the intermediate tertiary Bia binder on vertical paper electrophoresis (G23, Ul, U2). 

Electron-beam-mediated heating and flowing of patterned resist features has been demonstrated as a viable technique for shrinking the size of contact hole and via structures to sub-90-nm dimensions, thereby overcoming the mask error factor problem of printing these features. " While the CD uniformity of electron-beam-shrunk contact holes and vias is comparable to that obtained on the same structures that have not been irradiated with electron beam, the iso-dense bias does increase with the dose of electron-beam irradiation. 

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