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Particle implanted passivated silicon

A modem version of the charged particle detector is called PIPS, an acronym for Passivated Implanted Planar Silicon. This detector employs implanted rather than surface barrier contacts and is therefore more mgged and reliable than the Silicon Surface Barrier (SSB) detector it replaces. [Pg.138]

To measure the decay of the separated species, they are - after leaving the chromatographic column and entering a water-cooled recluster chamber - attached to new aerosols and transported through a capillary to a detection system, a rotating wheel or a moving tape system (Tiirler 1996) that positions the deposited activity in front of successive PIPS detectors (Passivated Ion-implanted Planar Silicon), which register a particles and SF events. The... [Pg.935]

For this reason, silicon surface barrier (SSB) or passivated implanted planar silicon (PIPS) detectors remain by far the most popular detector option for charged particle measurements. Although the best depth resolution normally attainable with these detectors is of the order of 5 nm, it is srtflicient to quantify the areal density (mg m ) of a polymer bmsh layer adsorbed at a sample surface. Polymer bmshes or polymer molecules have a typical spatial extent of the order of 2-lOrrm. In order to learn more about the bmsh, one really requires the depth resolution to be significantly better than the polymer chain dimensions. In other words, improvements of the depth resolution will need to rival that which is available by NR (-0.3 nm) before they are likely to have any significant impact on polymer science research. [Pg.676]


See other pages where Particle implanted passivated silicon is mentioned: [Pg.2969]    [Pg.2969]    [Pg.144]    [Pg.142]    [Pg.130]    [Pg.280]    [Pg.179]   
See also in sourсe #XX -- [ Pg.2969 , Pg.2970 ]




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