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Parallel surface method

The parallel surface method (PSM) has been invented to measure the average interface curvature (and the Euler characteristic) from the 3D data images [222]. First, a parallel surface to the interface is formed by translating the original interface along its normal by an equal distance everywhere on the surface (see Fig. 33). The change of the surface area at the infinitely small parallel shift of the surface is... [Pg.210]

Much better results are obtained by using the parallel surface method (Section III.F.3), because the integral methods are used to determine (K). Nevertheless, PSM gives only approximate estimation of the Euler characteristic and is extremely time-consuming in comparison to the methods described below. [Pg.221]

Now that we have determined the 3D structure, which reflects truly the real structures from global-to-local scale, and that we have obtained a sound physical basis of this structure, we proceed to analyze the structure in terms of interface curvatures, based on differential geometry. We used the parallel-surface method to determine the area-averaged mean curvature = <(/ci + k2)/2> and Gaussian curvature = ... [Pg.134]

Here in the present section we will describe the principle of a method to measure area-averaged curvatures, a parallel surface method (PSM). As mentioned in Sect. 3.1, the surface is expressed by many triangles and the normal vector at vertices of each triangle [37]. In the differential geometry, the following relation between the area of the infinitesimal patch at a point p, da 0,p), and that of the parallel patch, da d,p), holds [38]... [Pg.128]

Realization of the USCT method for restoring of SD of PMF of material in thick-sheet products with plane parallel surfaces under the unilateral access required special designs of US blocks, in which taken into account particularities of the NDTO, of the method and of the... [Pg.250]

The resistance when moving one layer of liquid over another is the basis for the laboratory method of measuring absolute viscosity. Poise viscosity is defined as the force (pounds) per unit of area, in square inches, required to move one parallel surface at a speed of one centimeter-per-second past another parallel surface when the two surfaces are separated by a fluid film one centimeter thick. Figure 40.16. In the metric system, force is expressed in dynes and area in square centimeters. Poise is also the ratio between the shearing stress and the rate of shear of the fluid. [Pg.598]

The rapid rise in computer speed over recent years has led to atom-based simulations of liquid crystals becoming an important new area of research. Molecular mechanics and Monte Carlo studies of isolated liquid crystal molecules are now routine. However, care must be taken to model properly the influence of a nematic mean field if information about molecular structure in a mesophase is required. The current state-of-the-art consists of studies of (in the order of) 100 molecules in the bulk, in contact with a surface, or in a bilayer in contact with a solvent. Current simulation times can extend to around 10 ns and are sufficient to observe the growth of mesophases from an isotropic liquid. The results from a number of studies look very promising, and a wealth of structural and dynamic data now exists for bulk phases, monolayers and bilayers. Continued development of force fields for liquid crystals will be particularly important in the next few years, and particular emphasis must be placed on the development of all-atom force fields that are able to reproduce liquid phase densities for small molecules. Without these it will be difficult to obtain accurate phase transition temperatures. It will also be necessary to extend atomistic models to several thousand molecules to remove major system size effects which are present in all current work. This will be greatly facilitated by modern parallel simulation methods that allow molecular dynamics simulations to be carried out in parallel on multi-processor systems [115]. [Pg.61]

This method for optimizing a process parallels the method given in the mapping example. First, some limit must be placed on all variables. Otherwise it would be impossible to cover the entire surface. In the mapping example it was the continental boundaries. Second, for each independent variable a number of specific points that are uniformly spaced and cover its whole range are chosen. The objective... [Pg.396]

Linear sweep voltammetry, capacitance-voltage and automated admittance measurements have been applied to characterize the n-GaAs/room temperature molten salt interphase. Semiconductor crystal orientation is shown to be an important factor in the manner in which chemical interactions with the electrolyte can influence the surface potentials. For example, the flat-band shift for (100) orientation was (2.3RT/F)V per pCl" unit compared to 2(2.3RT/F)V per pCl" for (111) orientation. The manner in which these interactions may be used to optimize cell performance is discussed. The equivalent parallel conductance method has been used to identify the circuit elements for the non-illum-inated semi conductor/electrolyte interphase. The utility of this... [Pg.355]

Consider radiation between two parallel surfaces, with two translucent obstructions A and B of transmissivity x as shown. Indicate the method of finding the view factor between the two parallel surfaces. [Pg.260]

Following the method already used, we select a plane at a distance Z from one of the two parallel surfaces (Z = 0 at Ti, Z = d at T2, T2 > Ti) and choose an element of area AS in it. If we assume that the temperature varies linearly through the gas (Newtonian heat flow), the temperature gradient is a constant equal to T2 — Ti)/d (Fig. VIII.3). [Pg.177]

Which is the desired result. This is also a miniproof of the crossed-strings method for the case of two infinitely long plain parallel surfaces. [Pg.738]


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See also in sourсe #XX -- [ Pg.128 ]




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