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P surfaces

This section contains a brief review of the molecular version of Marcus theory, as developed by Warshel [81]. The free energy surface for an electron transfer reaction is shown schematically in Eigure 1, where R represents the reactants and A, P represents the products D and A , and the reaction coordinate X is the degree of polarization of the solvent. The subscript o for R and P denotes the equilibrium values of R and P, while P is the Eranck-Condon state on the P-surface. The activation free energy, AG, can be calculated from Marcus theory by Eq. (4). This relation is based on the assumption that the free energy is a parabolic function of the polarization coordinate. Eor self-exchange transfer reactions, we need only X to calculate AG, because AG° = 0. Moreover, we can write... [Pg.408]

I. S. Barnes, S. T. Hyde, B. W. Ninham. The caesium chloride zero potential surface is not the Schwarz P-surface. J Physique Colloque 51 C7 19-24, 1990. [Pg.741]

Figure 5.18. Schematic representation of the density of states N(E) in the conduction band and of the definitions of work function d>, chemical potential of electrons p, electrochemical potential of electrons or Fermi level p, surface potential x> Galvani (or inner) potential

Figure 5.18. Schematic representation of the density of states N(E) in the conduction band and of the definitions of work function d>, chemical potential of electrons p, electrochemical potential of electrons or Fermi level p, surface potential x> Galvani (or inner) potential <p and Volta (or outer) potential T for the catalyst (W) and for the reference electrode (R). The measured potential difference Uwr is by definition the difference in Fermi levels <p, p and p are spatially uniform O and can vary locally on the metal sample surfaces and the T potentials vanish, on the average, for the (effective double layer covered) gas-exposed catalyst and reference electrode surfaces.32 Reprinted with permission from The Electrochemical Society.
Procedure The two algorithms FF050 and FF025 permit tabulated F-val-ues for the confidence levels p = 0.05 and 0.025 to be approximated with high accuracy. The strong curvature of the F - f f j2,p) surface militates against simple and flexible functions like polynomials only two confidence levels are available. [Pg.336]

In the FETs [Fig. 2.16(b) and (c)], however, the p region is relatively broad in comparison with the n regions moreover, the p surface has been completely covered by an insulating layer preferably of Si02, so that the transistor steering can only be achieved by a field effect. In FET (b) the insulating layer is in touch with a metal plate, the so-called "gate , and the area between both n... [Pg.97]

Jeanmaire D.L., Vanduyne R.P., Surface Raman spectro-electrochemistry. 1. Heterocyclic, aromatic, and aliphatic-amines adsorbed on anodized silver electrode, J. Electroanal. Chem. 1977 84 1-20. [Pg.253]

Grabbe E.S., Buck R.P., Surface-enhanced Raman-spectroscopic investigation of human immunoglobulin-g adsorbed on a silver electrode, J. Am. Chem. Soc. 1989 111 8362-8366. [Pg.258]

Koglin E., Sequaris J.M., Valenta P., Surface Raman-spectra of nucleic-acid components adsorbed at a silver electrode, J. Molecular Struct. 1980 60 421-425. [Pg.258]

The projection on the Xi Yi plane of the steepest descent path followed by the system during the photoinduced reaction (calculated as in Section 3) is shown in Fig. 16b. Past the saddle point corresponding to the transition state of the photoinduced reaction, f, the system follows the steepest descent path on the P surface en route to the caged product state, Xx = I, F, = 1, until it reaches... [Pg.169]

As the concentration of Ge(IV) was increased in the electroless solution, the deposition rate decreased rapidly, while the Ge content in the deposits increased (Fig. 11(b)). In contrast to a Ni-Ge-P solution employing a complexant such a citrate, increasing the concentration of Ge(IV) in the aspartate solution does not significantly alter the concentration of uncomplexed Ni2+ species through consumption of aspartate by Ge(IY). Thus, the decrease in deposition rate is associated with the soft character of the latter, which manifests itself in terms of strong adsorption on the Ni-Ge-P surface thereby inhibiting the electroless deposition process. [Pg.258]

Regarding the mechanism of electroless Ni-Ge-P deposition, it appears that key steps are the adsorption of the soft H2PO2 and [Ge(0H)4 0 ] " ions. Reduction of [Ge(OH)4 On " may involve a Ge(II) intermediate that remains mostly adsorbed on the Ni-Ge-P surface until it undergoes further reduction. The decrease in P content with increase in Ge content may be due to the competitive adsorption of [Ge(OH)4 and its reduction intermediate(s), and possibly faster kinetics of Ge... [Pg.259]

From a molecular point of view inside a catalyst particle, diffusion may be considered to occur by three different modes molecular, Knudsen, and surface. Molecular diffusion is the result of molecular encounters (collisions) in the void space (pores) of the particle. Knudsen diffusion is the result of molecular collisions with the walls of the pores. Molecular diffusion tends to dominate in relatively large pores at high P, and Knudsen diffusion tends to dominate in small pores at low P. Surface diffusion results from the migration of adsorbed species along the surface of the pore because of a gradient in surface concentration. [Pg.200]


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See also in sourсe #XX -- [ Pg.24 , Pg.25 , Pg.35 , Pg.39 , Pg.159 , Pg.165 ]




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