Oxynitride field

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Those readers interested in the general field of oxynitride structures may also wish to consult previous reviews in this area, as provided by Lang [1], Thompson 2], Marchand [3], and Thompson [4]. 

The colors of these perovskites span over a rather wide range, being originated by different mechanisms. Bandgap colors feature the oxynitride perovskites, while metal-oxygen charge transfer, often associated with intervalence charge transfer and crystal field electronic transitions, characterizes the oxidic phases. 

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