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Oxide films continued voids

It should be noted that in a vapour phase the liquid layer on the surface of a sensitive element of the sensor (zinc oxide) must be sufficiently thin, so that it would not produce any influence on the diffusion flux of oxygen through this layer. Possible lack of the film continuity (the presence of voids) does not prevent determination of concentration of oxygen in the bulk of the cell by the vapour - gas method. In this case, one deals with a semi-dry method. On the contrary, the presence of a thick liquid layer causes considerable errors in measuring t, because of different distribution of oxygen in a system gas - liquid layer -semiconductor film (this distribution is close to that in the system semiconductor film - liquid), in addition to substantial slowing down of oxygen diffusion in such systems. [Pg.262]

Edge defined film fed growth (EFG) is a commercial process [13] that facilitates the fabrication of continuous void free single crystal oxide fibers (Figure 16) from tungsten or other growth orifices. [Pg.113]


See other pages where Oxide films continued voids is mentioned: [Pg.65]    [Pg.551]    [Pg.275]    [Pg.282]    [Pg.404]    [Pg.169]    [Pg.58]    [Pg.192]    [Pg.308]    [Pg.315]    [Pg.316]   
See also in sourсe #XX -- [ Pg.8 , Pg.88 ]

See also in sourсe #XX -- [ Pg.8 , Pg.88 ]




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Continuous film

Continuous oxidation

Oxidation films

Oxidation—continued

Void, voids

Voiding

Voids

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