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Organic semiconductor gate electrode

Laminating this structure against a substrate that supports an organic semiconductor, gate dielectric (GR) and gate electrode (ITO) forms a transistor with the source/drain electrodes on top of the semiconductor. The transistor shown here... [Pg.256]

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. [Pg.196]

III), were prepared by Kim et al. (4) and used in gate electrode, a gate insulating layer, an organic semiconductor layer, and in source/drain electrodes applications. [Pg.183]

An OTFT comprises three electrodes (source, drain, and gate), a gate dielectric layer, and an organic or polymer semiconductor layer. In operation, an electric field is applied across the source-drain electrodes, and the transistor is turned on when a voltage (VG) is applied to the gate electrode, which induces a current flow (fD) from the source electrode to drain electrode. When VG = 0, the transistor is turned off, fD should in theory be 0, that is, no current is flowing. [Pg.232]

Fig. 10.23. The frame on the left shows current-voltage characteristics of an n-channel transistor formed with electrodes patterned by nanotransfer printing. Laminating these electrodes against a substrate (PET) that supports an organic semiconductor (FCuPc), a gate dielectric (GR) and a gate (ITO)... Fig. 10.23. The frame on the left shows current-voltage characteristics of an n-channel transistor formed with electrodes patterned by nanotransfer printing. Laminating these electrodes against a substrate (PET) that supports an organic semiconductor (FCuPc), a gate dielectric (GR) and a gate (ITO)...
Fig. 13.1. Schematic structure of the organic thin-film transistor. Starting from the bottom, the transistor consists of the following layers substrate (brown), gate electrode G, (yellow), gate insulator layer (red), the source, S, and drain, D, electrodes (yellow), semiconductor (grey). Fig. 13.1. Schematic structure of the organic thin-film transistor. Starting from the bottom, the transistor consists of the following layers substrate (brown), gate electrode G, (yellow), gate insulator layer (red), the source, S, and drain, D, electrodes (yellow), semiconductor (grey).

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See also in sourсe #XX -- [ Pg.298 ]




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