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OMCVD

Physics and chemistry researchers approach III—V synthesis and epitaxial growth, ie, growth in perfect registry with the atoms of an underlying crystal, differently. The physics approach, known as molecular beam epitaxy (MBE), is essentially the evaporation (14—16) of the elements, as illustrated in Figure 4. The chemistry approach, organometaUic chemical vapor deposition (OMCVD) (17) is exemplified by the typical chemical reaction ... [Pg.118]

Thin-film epitaxy by OMCVD is generally more flexible, faster, lower in cost, and more suited for industrial production than MBE. An OMCVD system usually consists of two principal components, a gas manifold for blending the gas composition, and a graphite substrate holder which is usually inductively heated. A schematic diagram of an OMCVD system is shown in Figure 5. [Pg.118]

Fig. 5. A gas manifold for the production of epitaxial layers of Group 111—V semiconductors by OMCVD where [... Fig. 5. A gas manifold for the production of epitaxial layers of Group 111—V semiconductors by OMCVD where [...
Morancho, R., Constant, G., Gallon, C., Boucham, J., Mazerolles, P., and Bernard, C., OMCVD Elaborating and Optical Properties of Germanium Carbon Alloys, Proc. 5th European Conf. on CVD, (J. Carlsson and J. Lindstrom, eds ), pp. 526-532, Univ. of Uppsala, Sweden (1985)... [Pg.230]

The most intensive development of the nanoparticle area concerns the synthesis of metal particles for applications in physics or in micro/nano-electronics generally. Besides the use of physical techniques such as atom evaporation, synthetic techniques based on salt reduction or compound precipitation (oxides, sulfides, selenides, etc.) have been developed, and associated, in general, to a kinetic control of the reaction using high temperatures, slow addition of reactants, or use of micelles as nanoreactors [15-20]. Organometallic compounds have also previously been used as material precursors in high temperature decomposition processes, for example in chemical vapor deposition [21]. Metal carbonyls have been widely used as precursors of metals either in the gas phase (OMCVD for the deposition of films or nanoparticles) or in solution for the synthesis after thermal treatment [22], UV irradiation or sonolysis [23,24] of fine powders or metal nanoparticles. [Pg.234]

Figure 9.1 General pathway to deposit a metal M from an organometallic complex by OMCVD. This example refers to an organometallic precursor, for which all of the ligands except X have been omitted for clarity. Figure 9.1 General pathway to deposit a metal M from an organometallic complex by OMCVD. This example refers to an organometallic precursor, for which all of the ligands except X have been omitted for clarity.

See other pages where OMCVD is mentioned: [Pg.368]    [Pg.119]    [Pg.119]    [Pg.103]    [Pg.181]    [Pg.656]    [Pg.347]    [Pg.367]    [Pg.42]    [Pg.270]    [Pg.51]    [Pg.158]    [Pg.158]   
See also in sourсe #XX -- [ Pg.187 ]

See also in sourсe #XX -- [ Pg.3 , Pg.3 , Pg.8 , Pg.17 ]

See also in sourсe #XX -- [ Pg.18 , Pg.83 , Pg.173 ]




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OMCVD (organometallic chemical vapor

Organometallic chemical vapor deposition OMCVD)

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