NONLINEAR RESISTANCES

Andriotis AN, Menon M, Chemozatonskii L (2003). Nonlinear resistance dependence on length in single-wall carbon nanotubes. Nano Lett. 3 131-134. 

Similar conclusions on the character of conductance in the polycrystalline diamond films were derived in [33], The resistive intercrystallite boundaries can involve nonlinear resistance in polycrystalline diamond films moderately doped with boron [34]. Later, more sophisticated analysis [35-37] of the frequency dependence of impedance of polycrystalline diamond films resulted in a conclusion that at higher temperatures, in addition to the aforementioned electric conductance caused by the motion of free holes in the valence band, a second component of conductance manifests itself. The second component is due to the hopping of charge carriers between local traps possibly associated with the intercrystallite boundaries. 

One possible origin of chaos is the nonlinear resistance of the quantum particle against localization inside the box of width q. Therefore, the occurrence of quantum chaos in this system may be a direct consequence of Heisenberg s uncertainty principle. Therefore, the quantum pressure of the electron on the walls is called the Heisenberg pressure . 

Both theoretical premises and some experimental data allow us to try to find an explanation of the observed membrane polarization changes in artificial membranes. The first contributing factor which is involved is the membrane resistance. When the concentrations of electrolytes are the same across the membrane, the resistance is linear. Nonlinear resistance and rectifying properties of the membrane above this restriction are detected. If the lipid-like substances are characterized by high resistance, proteins display lower resistance, and their presence in membranes diminishes it con-... 

The nature of the barrier to charge transfer at the metal-oxide interface is open to speculation. Assuming semiconducting properties for the Pt-oxide layer, this additional barrier may simply represent the nonlinear resistance of a metal-semiconductor junction, i.e., resistance of a diode biased in the conduction direction. For high bias voltages, the current-voltage relation for such a junction may be expressed by an equation of the form of Eq. (31). 

The following nonlinear resistive valve relations are used. These not necessarily follow the basic relations of linear bond graph elements but their own ... 

Poly(L-glutamic acid) shows reversible helix-coil transition wifli pH changes, fri an alkaline solution, the gel swells violently due to static repulsion by the carboxylic group and flie shape of flie membrane cannot be maintained. If a block copolymer is synfiiesized wifli hydrophobic L-lysine, a cylindrical microphase separation is observed. This material avoids macroscopic deformation. Thus, a membrane wifli molecular level deformation can be manufactured [64]. This membrane shows not only control of permeation by pH changes but also nonlinear responses like vibration of potential by salt concentration difference [65] and nonlinear resistance upon voltage application [66]. 

In Japan, modeling a tower footing impedance as a simple linear resistance Rf is recommended, although a current-dependent nonlinear resistance is recommended by the IEEE and the CIGRE [16,18,20]. The inductive and capacitive characteristics of the foot-ing impedance, as shown in Figure 2.40, are well known [10]. The recom-mended value of... 

The simplest and most common case refers to an oscillator whose nonlinear resistance is assumed to be elastoplastic with an initial stiffness k and yield displacement Uy corresponding to a... 

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