Nitrides and Related Compounds

Figure 9.18. A selection of N MAS NMR spectra of nitrides and related compounds. From Harris et al. (1990, 1992), by permission of the American Chemical Society.

The structures of the metal, hydrides, and carbides are described in other chapters, as also are the halides MX3, MX4, and MX5. Here we devote sections to certain halide structures peculiar to U, complex fluorides of Th and U, oxides of U, uranyl compounds and uranates, nitrides and related compounds, and conclude with a note on the sulphides of U, Th, and Ce. 

Mossbauer spectroscopy may be applied to compounds containing iron. Some limited data have been reported for the iron nitride and related iron carbide clusters.355 358365... 

B4.1 General remarks on III-V nitride etching B4.2 Dry etching of GaN and related compounds B4.3 Wet etching of GaN and related compounds... 

Relations between the structures of some nitrides and oxy-compounds... 

Nitrides, Phosphides, Arsenides, and Related Compounds. The presence of imperfections in the metal sub-lattice of cubic tantalum nitride indicated by neutron diffraction experiments has been confirmed by density measurements the results are consistent with the stoicheiometry Tao.saN. The phase diagram of the Ta-N system has been investigated. The dissociation pressure of non-stoicheiometric niobium mononitride has been measured,and the structures of Nb32N3, Ni2Ta4N, " TagN, and TaagNj have been determined. 

Nitrogen Ceramics. The nitrides, oxynitrides, sialons and related compounds containing nitrogen. 

Van de WaBe, C.G., Neugebauer, J., and Stampfl, C. (1999) Impurities and native defects in GaN and related compounds, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, eds J.H. Edgar, S. Strite, I. Akasaki, et al. INSPEC. Boguslawski, P. and Bemholc, J. 

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. 

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