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Negative resist quantum yields

For positive lit electrodes one can register the drift of holes, and for negative ones- the drift of the electrons. The photosensitizer (for example Se) may be used for carrier photoinjection in the polymer materials if the polymer has poor photosensitivity itself. The analysis of the electrical pulse shape permits direct measurement of the effective drift mobility and photogeneration efficiency. The transit time is defined when the carriers reach the opposite electrode and the photocurrent becomes zero. The condition RC < tlr and tr > t,r should be obeyed for correct transit time measurement. Here R - the load resistance, Tr -dielectric relaxation time. Usually ttras 0, 1-100 ms, RC < 0.1 ms and rr > 1 s. Effective drift mobility may be calculated from Eq. (4). The quantum yield (photogenerated charge carriers per absorbed photon) may be obtained from the photocurrent pulse shape analysis. [Pg.8]


See other pages where Negative resist quantum yields is mentioned: [Pg.134]    [Pg.145]    [Pg.428]    [Pg.156]    [Pg.14]    [Pg.212]    [Pg.554]    [Pg.256]    [Pg.776]    [Pg.286]    [Pg.284]    [Pg.257]    [Pg.45]    [Pg.472]    [Pg.61]   
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