Multilevel resist technology

The practice of multilevel resist technology has evolved rapidly since its introduction in 1973 (39) largely through resist materials innovation. The first applications of this technology involved use of DQN-type resists over poly(methyl methacrylate) (PMMA) as the planarizing layer. The pattern was... 

The current technological competition for practical fabrication of 0.5 - 1.0 pm feature is in between photolithography and electron beam direct writing, and between single layer and multi-level resist. For less than 0.5 pm, the use of electron beam writing with multilevel resist will be inevitable. Further developments in electron resists from the standpoint of both resist chemistry and process development will be necessary to establish the electron beam lithography. 

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