MOS—See Metal oxide semiconductor

Plasma etching is widely used in semiconductor device manufacturing to etch patterns in thin layers of polycrystaUine siUcon often used for metal oxide semiconductor (MOS) device gates and interconnects (see Plasma TECHNOLOGY). 

Both the light-emitting diode (LED) and the FET structures can be found in classic textbooks discussing semiconductor devices [29]. The device structures commonly used are those of the P-N (or P-i-N) diode for the LEDs and the lateral metal oxide semiconductor (MOS) FET. These structures are based on (currently standard) processes of multilayer deposition as well as selective N and P type doping (see Figure 7.1) and rely on the mobility of 1 cm v s or more. 

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