Mobility indium compounds

Table4.1-89 Electron and hole mobilities /in and /tp of indium compounds...

The mobility and resistivity data of single crystalline zinc oxide samples (measured at room temperature) from different authors, which were reported from 1957 to 2005, are displayed in Fig. 2.6 as a function of the carrier concentration (part of these data were taken from [67]). Undoped ZnO crystals exhibit carrier concentrations as low as 1015 cm-3, while indium-doped crystals reach carrier concentrations up to 7 x 1019cm-3. The mobility data show a large scattering between carrier concentrations of 1017 to 5 x 1018cm-3. This is caused by the fact that zinc oxide is a compound semiconductor that is not as well developed as other semiconducting compounds. For instance, only... 

The molecular structure of decabenzylferrocene also helped to explain the rather low solubility of this compound in toluene or benzene, in sharp contrast with the previously found excellent solubility properties of other decabenzylmetallocenes and the pentabenzyl-Cp thallium and indium complexes in these solvents. The steric crowding of the benzyl groups in the ferrocene and their limited mobility leave little space for the solvent arene molecules to interact and subsequently to dissolve the molecule. This is quite similar to the situation encountered in the pentaphenylcyclopenta-dienyl derivatives with their closely packed phenyl rings (see Fig. 3). 

Indium antimonide inorg chem InSb Crystals that melt at 535°C an intermetallic compound having semiconductor properties and the highest room-temperature electron mobility of any known material used in Hall-effect and magnetoresistive devices and as an infrared detector, j in-ds-cm, an tim-3,nTd ... 

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