Microelectronics materials characterization, SIMS

RYAN-HOTCHKiss Microelectronic Materials Characterized by SIMS... 

Static SIMS. The static SIMS instrument was briefly described in the instrumental section. Static SIMS has been applied to the study of metal surfaces (fig.) oxide formation (11), and catalysts (ii fi6) but static SIMS is not widely used in microelectronics materials characterization. A major limitation of static SIMS for microelectronics applications is the inability to obtain a detectable signal from a very small area on the sample. The low energy low current density primary ion source used in static SIMS produces a lower count rate per unit area of sample than does the higher energy higher current density used in dynamic SIMS. 

The sensitivity and Inherent depth profiling capabilities of SIMS make It a valuable tool for characterization and problem solving In microelectronics materials and processes. These and the other capabilities of SIMS which have been described In this review allow SIMS to be applied to a wide range of problems. 

The purpose of this chapter Is to discuss the principles of photoelectron spectroscopy and Its applications In the semiconductor and microelectronics Industries. Other recent reviews (5-10) have dealt with the use of XPS, AES, SIMS and ISS for failure analysis and materials characterization for these and related Industries. 

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