Mask bias

As a consequence, the reticle dimension control is a major concern with shrinking critical dimension and tolerance. The difference between the effective mask feature size (the reticle dimension divided by the exposure system reduction factor) and the target developed resist dimension is called the mask bias. 

Whether the academy and classroom can be neuttal ground has been called into question, for instance by Juha Alvarez. Bom in the U.S., Alvarez is a Dominican-American poet, novehst, and essayist whose family was forced to flee the Dominican Repubhc when she was 10, due to her father s involvement with an attempt to overthrow the dictator Tmjiho. Such experiences have made her attentive to issues of oppression and dominance. As Alvarez has noted, claims of neuhality often mask bias ... 

Assuming = 0 will potentially add bias to the interpretation of plant measurements. Further, the plant bias may to some extent mask the error in the measurements. While the designer may have envisioned a constant set of conditions or a specified time dependence, it is likely that the actual operation changes due to external factors. 

The etch rates were measured by a surface profiler and field emission scatming electron microscopy (FESEM), and the etch profile were observed by FESEM. In this study, a C /Ar gas chemistry was chosen to obtain high etch selectivity of Si film to niobium oxide mask since CI2 gas was known to be a good etch gas for Si films. The etch rate, etch selectivity and etch profile of niobium oxide nanopillars and Si films were explored by varying the CI2 concentration, coil RF power and dc bias voltage to substrate. 

The formation of Si nanodot arrays on a substrate was performed by ICPRIE of Si films using self-assembled niobium oxide pillars as an etching mask. The etch rates of niobium oxide pillars and Si films, and the etch selectivity of Si films to niobium oxide were investigated by varying etch parameters in a Ch/Ar gas. The main etch parameters used in this study were the concentration of CI2 gas, coil rf power, and dc-bias to substrate. 

Fig. 2. SEM images of TaN gate stack with photoresist masks after etching (a) in pure CI2 and (b) CI2/O2. The experiments were performed at a pressure of lOmTorr, source power of 400W, and bias voltage of -200V.

Despite the uniformity of the above findings, they remain less than conclusive because of the absence of randomization and masking, which allows the possibility of selection and assessment bias. There have been only two randomized, controlled trials of clozapine. 

Guella, G. Mancini, I. Oztun , A. Pietra, F. (1999B) Conformational bias in macrocyclic ethers and observation of high solvolytic reactivity at a masked furfuryl (= 2-flirylmethyl) C-atom. Helv. Chim. Acta, 82, 336-48. 

A bias will cause an accumulation of differences that can be detected quite early. In the days of graph paper, a V-shaped mask was placed over the graph... 

Guella G, Mancini I, Oztunc A, Pietra F (2000) Conformational Bias in Macrocyclic Ethers and Observation of High Solvolytic Reactivity at a Masked Furfuryl (=2-Furylmethyl) C-Atom. Helv Chim Acta 83 336... 

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