Mask arrays

Optimal chirped-pulse schemes for achieving population inversion ( molecular 7r pulses ) and to explain the chirp-dependence of multiphoton absorption yields have been described by Cao (Cao and Wilson, 1997 Cao, et al., 1998 Cao, et al., 2000). The learning algorithm approach has been reviewed by Levis, et al., (2001) and Rabitz, et al., (2000). The use of masks, arrays, and computer controlled liquid crystal devices for phase and amplitude control has been described by Kawashima, et al., (1995) Weiner, (1995) Krause, et al., (1997) and Tull, et al., (1997). Schemes for storing information in the rotation-vibration levels of diatomic molecules have been implemented by Ballard, et al., (2002) and Stauffer, et al., (2002). 

Douglas and coworkers were the first one that described a bottom-up approach based on S-layers as templates for the formation of perfectly ordered arrays of nanoparticles [128]. The S-layer lattice was used primarily to generate a nanometric lithographic mask for the subsequent deposition of metals. In this approach a thin Ta-W film was deposited... 

Synthesis of nanodot arrays using self-assembled niobium oxide nanopillar mask by reactive ion etching... 

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). 

The formation of Si nanodot arrays on a substrate was performed by ICPRIE of Si films using self-assembled niobium oxide pillars as an etching mask. The etch rates of niobium oxide pillars and Si films, and the etch selectivity of Si films to niobium oxide were investigated by varying etch parameters in a Ch/Ar gas. The main etch parameters used in this study were the concentration of CI2 gas, coil rf power, and dc-bias to substrate. 

Figures 3(b) and 3(c) were the EDS results of the etched nanodot arrays shown in Figs. 2(b) and 2(c). The EDS of Fig. 3(b) was almost identical to that of Fig. 3(a). It means that niobium oxide masks were still on Si film although the Si dots were formed. Fig. 3(c) was the EDS result of the nanodot arrays etched for longer etch time than Fig. 3(b). The Nb peak disappeared due to the increased etching and it was confirmed that the nanodots consisted of only Si. The diameters of Si nanodots were approximately 20 30 nm. It was demonstrated that the optimal etching condition could form close-packed and highly ordered Si nanodot arrays without niobium oxide mask. It is expected that this novel technique of forming...

Fig. 5. FESEM micrographs of Co2MnSi films etched in (a) 20% Cb/Ar, (b) 60% Cb/Ar, (c) 10% 02/10% Cb/Ar and (d) FESEM micrograph of etched MTJ stack arrays using TiN mask at 20% O2/10%Cb/Ar. TiN hard mask were used...

Electrochemical experiments have been carried out on materials deposited by PVD on silicon microfabricated arrays of Au pad electrodes [Guerin et al., 2006a]. The substrate is made up of a square silicon wafer capped with silicon nitride (31.8 mm x 31.8 mm), which has an array of 100 individually addressable Au pad electrodes. These electrodes make up a square matrix on the wafer, which can be masked when placed in a PVD chamber, allowing deposition of thin films on the Au electrodes. Figure 16.3 is a schematic drawing of the configuration. Small electrical contact pads in Au for the individual addressing of electrodes (0.8 mm x 0.8 mm) are placed on the boundaries. 

Figure 16.2 Thickness determination of An deposition onto a bare silicon wafer using a 10 x 10 contact mask in two geometries (see insets), using (a) AFM along the diagonal of an array of 100 electrodes and (b) AFM and ellipsometry for a deposition geometry that allowed an average of 10 fields of identical thickness across the wedge. The source temperatures and deposition times were (a) 1548K, 7200 s and (b) 1623K and 4500 s.

The low nonspecificity of PEG layers also was used to eliminate biomolecule binding to certain areas of an array. Kidambi et al. (2004) patterned an mPEG-carboxylate molecule onto polyelectrolyte multilayers to mask portions of the surface. The extremely low binding character of PEG provides advantages for creating patterned surfaces that other modifiers using aliphatic alkyl linkers do not provide. 

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