Controlled plasma magnetron method

An external magnetic field has also been used to confine the plasma [143]. An arrangement where electromagnets are located under the cathode is known as the controlled plasma magnetron method [144]. The diffusion of electrons to the walls is prevented by the magnetic field between cathode and anode. This results in an increase in electron density, and consequently in a faster decomposition of silane and a higher deposition rate. At a deposition rate of 1 nm/s, device quality material is obtained [144]. In addition, a mesh is located near the anode, and the anode can by biased externally, both in order to confine the plasma and in order to control ion bombardment. 

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