Vibrational modes, local

Experimentally, local vibrational modes associated witli a defect or impurity may appear in infra-red absorjrtion or Raman spectra. The defect centre may also give rise to new photoluminescence bands and otlier experimentally observable signature. Some defect-related energy levels may be visible by deep-level transient spectroscopy (DLTS) [23]. 

The maximum of c/T3 is probably due to localized vibrational modes such as excitations in the molecular structure [40], We can see from Fig. 12.14 that the maximum has not been reached in these measurements which are limited to 4.2 K. For the similarity with polypropylene, the maximum in c/T3 for Torlon can be expected at about 10K. 

In Chapter 8, Stavola and Pearton discuss the local vibrational modes of complexes in Si that contain hydrogen or deuterium. They also show how one can use applied stress and polarized light to determine the symmetry of the defects. In the case of the B-H complex, the bond-center location of H is confirmed by vibrational and other measurements, although there are some remaining questions on the stress dependence of the Raman spectrum. The motion of H in different acceptor-H complexes is discussed for the Be-H complex, the H can tunnel between bond-center sites, while for B-H the H must overcome a 0.2 eV barrier to move between equivalent sites about the B. In the case of the H-donor complexes, instead of bonding directly to the donor, H is in the antibonding site beyond the Si atom nearest to the donor. The main experimental evidence for this is that nearly the same vibrational frequency is obtained for the different donor atoms. There is also a discussion of the vibrational modes of H tied to crystal defects such as those introduced by implantation. The relationship of the experimental results to recent theoretical studies is discussed throughout. 

II. Local Vibrational Mode Spectroscopy and Uniaxial Stress Techniques... 

While the BC configuration for the B—H complex is now accepted, several aspects of the vibrational spectra of the acceptor-H complexes are not understood. The temperature dependence of the B—H complex has been examined by Raman spectroscopy (Stutzmann and Herrero, 1987) and IR absorption (Stavola et al., 1988a). The H-stretching vibration shifts from 1875 to 1903 cm 1 between room temperature and liquid He temperature. Frequency shifts of just a few cm 1 are more typical for local vibrational modes. The vibrational bands are also surprisingly broad. 

The stress parameters Aj and A2 for B—H are large for local vibrational modes. For example, they are an order of magnitude larger than was... 

Besides the electrically active complexes discussed above, there is indirect evidence for the existence of neutral complexes. In close analogy to the observations in silicon and several III-V materials it appears that hydrogen passivates deep and shallow acceptors. Because of the small concentrations of these neutral centers, all attempts to detect them directly with local vibrational mode (LVM) spectroscopy or electron paramagnetic resonance (EPR) have been unsuccessful. 

R. C. Newman, Local Vibrational Mode Spectroscopy of Defects in III/V Compounds... 

A non-perturbative theory of the multiphonon relaxation of a localized vibrational mode, caused by a high-order anharmonic interaction with the nearest atoms of the crystal lattice, is proposed. It relates the rate of the process to the time-dependent non-stationary displacement correlation function of atoms. A non-linear integral equation for this function is derived and solved numerically for 3- and 4-phonon processes. We have found that the rate exhibits a critical behavior it sharply increases near a specific (critical) value(s) of the interaction. 

In this paper, the multiphonon relaxation of a local vibrational mode and the non-radiative electronic transitions in molecular systems and in solids are considered using this non-perturbative theory. Results of model calculations are presented. According to the obtained results, the rate of these processes exhibits a critical behavior it sharply increases near specific (critical) value(s) of the interaction. Also the usual increase of the non-radiative transition rate with temperature is reversed at certain value of the non-diagonal interaction and temperature. For a weak interaction, the results coincide with those of the perturbation theory. 

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