Light fabric sensitivity

Polymer films that are sensitive to light, x-rays, or electrons— known as photoresists—are nsed extensively to transfer the pattern of an electronic circuit onto a semiconductor surface. Such films must adhere to the semiconductor surface, cross-link or decompose on exposure to radiation, and nndergo development in a solvent to achieve pattern definition. Virtually all aspects of photoresist processing involve surface and interfacial phenomena, and there are many outstanding problems where these phenomena mnst be controlled. For example, the fabrication of multilayer circuits requires that photoresist films of about 1-pm thickness be laid down over a semiconductor surface that has already been patterned in preceding steps. 

Figure 10.17. (a) Schematic diagram of the nanowire dye-sensitized solar cell. Light is incident through the bottom electrode, (b) SEM cross section of a solution-fabricated ZnO nanowire array on fluorine-doped tin oxide. The wires are in direct contact with the substrate. Scale bar, 5 pm. Reproduced from Ref. 41, Copyright 2005, with permission from the Nature Publishing Group. 

The light reflectance of yams and fabrics can be quite sensitive to the size and shape of the fibers. Two types of light interactions occur, as follows ... 

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