Light aluminum nitride

For attenuated phase shift lithography, light blocking materials, which have phase shifting characteristic, such as molybdenum silicide (MoSi), aluminum/aluminum nitride cermet, understoichiometric silicon nitride, tantalum silicon oxide composite, are used. All these materials record 4 15 % transmission at UV light... 

Taniyasu, Y., Kasu, M., and Makimoto, T. (2006) An aluminum nitride light-emitting diode with a wavelength of 210 nanometers. Nature, 441, 325-328. 

In reflectometry, the light passes through the films to be measured. Beneath the transparent films, there must be an opaque substrate through which light does not pass. The substrate characteristics must be modeled correctly to calculate the thicknesses of the films above. In silicon processing, theoretically, any of the commonly used metal materials, such as the titanium nitride (TiN), aluminum (Al), and tungsten (W), can be used as substrates. However, in reality, whereas a PMD oxide can be measured on the polysilicon material used in poly interconnections, an ILD oxide can not be measured directly on TiN, because the TiN layer used is too thin to be opaque. TiN is semitransparent if its thickness is less than 1000 A. A thin... 

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