Leakage current density

Leakage Current Density Under Open-Circuit Condition at Different Temperatures and 0.5 Acm 2 at 600°C [178]... 

Fig. 5.9 Leakage current density of an as-pre- of magnitude by a short anneal of the oxide...

Figure 4.16. The trend of increasing leakage current density with decreasing gate length. Reproduced with permission from Intel Corporation (http //www.intel.com).

However, it appears that BST films deposited by MOC VD have lower defect density, by at least an order of magnitude compared to sputter deposited films, thus, smaller N. This can be inferred from the film thickness independent leakage current density (J) vs. applied field strength (E) of the MOCVD films" whereas J increases with increasing film thickness at a given applied field for sputtered films. ... 

The larger nucleation density of a Pt film on the BST also appears to have some relationship with the incorporation of the F at interfaces. It was observed that the top and bottom electrode interfaces came to have a noticeable amount of F impurity because the chemical bonding of Ba and Sr with F is quite strong and the fluorides are not volatile at the deposition temperature. Interestingly, the dielectric constant and leakage current density of the BST film having F impurity by the Pt top electrode are better than those of the film having a sputtered Pt top electrode. 

The breakdown field strength was approximately 8 MV/cm. The high capacitance (430. .. 470nF/cm ) and resistivity (1.3. .. 2.4 lO ficm) of the barrier aluminium oxide film were determined. The leakage current density... 

Table 1. Spin-coated CPB thin film (<20 nm) deposition condition and pentacene-based TFT device performance (mobility and on/off ratio) - polymer/crosslinker concentration ratio (mg/ml mg/ml), solvent, film thickness (D, nm), RMS roughness (p, nm), leakage current density at an electric field of 2 MV/cm (J, A/cm2), mobility (ji, cm2/Vs), and Current On/off Ratio (/<, /< ) ...

Figure 5-16. Leakage current density as a function of post-deposition anneal temperature for CVD Ta205 films grown on Si using Ta(0Et)s/02/N2. (Data from [118]).

The vapor pressure of potassium is much higher than that of lithium, and potassium can form an undesirable gas phase. Lithium dissolved in the electrolyte migrates toward the positive electrode where it is consumed in an unproductive chemical reaction. For an interelectrode distance of 1 mm, the associated self-discharge is equivalent to a leakage current density of 1-10 mA/cm. Moreover, dissolved lithium causes disintegration of the ceramic separators. The solubility of lithium greatly increases with increasing temperature. 

Equation (2.36) indicates that due to the leakage current and faradic leakage current, the current used to charge a supercapacitor is larger than expected and the current obtained from it is less than expected. Note that these two leakage current densities cause the self discharging of a supercapacitor, which is not desirable for practical applications. For a detailed discussion please see Reference 33. This faradic leakage current density is an... 

Guo N, DiBenedetto SA, Tewati P, Lanagan MT, Rattier MA, Marks TJ (2010) Nanoparticle, size, shape and interfacial effects on leakage current density, permittivity, and breakdown strength of metal oxide-polyolefin nanocomposites experiments and theory. Chem Mater 22 1567-1578... 

Table 27-3 indicates the photo-induced densification of various kinds of sol-gel films. Amorphous TaaOs films were prepared by a sol-gel route with UV irradiation. In this case, organic components in gel films were removed by ozone-oxidation with 185 imi irradiation (Ohishi, 1993). A significant reduction in the leakage current density was foimd with the reduction of sub-oxides, impurities, oxygen vacancies, and defects in the films. The formation of active oxygen species is considered to lead to the improvement. 

In the experimental stmctures of the above type the achieved reductions of leakage current density reach the values tenfold smaller than in two-contact exclusion structures. 

These lifetimes are extremely short because there are so many majority carriers to combine with. Neither the diffusion coefficients nor the lifetimes are particularly temperature dependent, but nf exp -Eg/kT). The leakage current can be minimized by selecting a high bandgap material and by heavy doping. Typical values for the leakage current density Jo are 0(10 A/m ) at ambient temperatures. 

Figure 3.1. Gate leakage current density (Jg) versus gate voltage (Vg) curve of Au/La203/Si MIS capacitors with and without U V ozone post treatment...

Figure 3.5. Comparison of leakage current density at a bias of IV below the flat band voltage of Au/La203/Si MIS capacitors undergone with different treatments. The thickness of La203 films was about 4nm...

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