Lattice indium compounds

The sulphides M2S3 are all made by direct combination of the elements. But GaS is also known and has an unusual layer lattice containing Ga2 ions (Hahn and Frank, 1955). The nitride GaN,unreactive to water and acids, is made by heating gallium in ammonia at 1000° the corresponding indium compound is best made by heating (NH4)3lnFg. Both have the wurtzite lattice. 

The various ternary /f- -metal-In indides, the corresponding structure types, and the lattice parameters have been hsted in the previous section (tables 1-11). These ternary indides crystalhze with 58 different stracture types. 24 of them represent new stmcture types of in-termetallic compoimds. They have been determined first for these indium compounds. In the following paragraphs, we list the atomic coordinates and details on the coordination polyhe-dra. 

Compounds containing In—O, In—S, and In—Se Bonds.— A number of compounds derived from In acetate have been studied by Habeeb and Tuck. Among these was indium diacetate, produced by the electrolysis of In in acetic acid. This has a lattice of In(OAc)3 + In(OAc), containing polymeric carboxylate-bridged units [similar to In(OAc)3, (Me4N)3ln(OAc>3 (C104)3, etc., which is unrelated to the indium dihalides . 

In addition, it is found from the spectra that the magnesium indium spinel crystal system is not likely to reveal new compounds. Further, the channeling measurement indicates that the amount of ion irradiation does not cause amorphization of the lattice surface layers and that the range of investigated doses for the defects of the interstitial hydrogen and lithium type is predominant. 

The compounds R3MC and RM3C3 are the only known compositions that exist in the rare-earth-metal-(aluminium, gallium, indium and thallium)-carbon systems at the present time. A number of reports on the preparation of cubic perovskite-type carbides containing rare earth elements with the general formula RjMC 00 (Jeitschko et al. 1964, Rosen and Sprang 1965, Haschke et al. 1966a, b, Nowotny 1968) contain little information about their properties other than their lattice parameters. 

In-As System. The phase diagram of the In-As system has been constructed by Liu and Peretti [1]. The system contains a compound which melts congruently at 943 3°C. This compound forms eutectics with the initial components (with indium the eutectic is degenerate). Indium arsenide has the structure of zinc blende with a lattice constant of 6.058A [2]. 

The ternary rare earth metal-transition metal-indium systems contain a vast number of individual intermetalhc compounds. In this section we summarize the crystallographic data (lattice parameters) of all known indides. The compounds are grouped with respect to the d element component. 

A similar relation is observed for the binaiy structure types YCde (SG.Im3,a = 1548.3 pm) (Larson and Cromer, 1971) and YbCdg (SG lm3, a = 1565.8 pm) (Palenzona, 1971), and temaiy YbAg2ln4 (Sysa et al., 1989). These structures are actually identical considering the lattice parameters, the space group symmetry, the sites, and the parameters of the atoms. In YbAg2ln4 the smaller silver and indium atoms are ordered, thus, it represents a temaiy ordered superstmcture of the binary ones. However, there is a difference between the binary compounds in YCdg one cadmium atom occupies the 24g site by about one third, and in... 

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