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Lattice displacements

Burger s vector A measure of the crystal lattice displacement resulting from the passage of a dislocation. [Pg.70]

Here, the second term describes the change of the hopping amplitudes due to the displacement of the atoms parallel to the chain [cf. Eq. (3.5)] and the third term is a random contribution resulting from the conformational disorder (chain twists). While the lattice displacements u are dynamic variables, the fluctuations dl +t due to disorder are assumed to be frozen ( quenched disorder). [Pg.51]

Since the Lindemann ratio dija 0.1 is empirically roughly the same for all substances, one expects the g value, as measured by sound attenuation, to be correlated with the glass transition temperature. Note that this relationship is independent of the details of the bead assignment. Equation (20), if rewritten as Tg di/a) g, is almost obvious, given the interaction of the form in Eq. (17) The typical lattice displacement, at Tg, is roughly A< ) j- dija. On the other hand, the typical structural excitations have the energy of about Tg, at the glass transition. [Pg.134]

Lattice Displacements. In the above the question of lattice displacements has not been covered. These will be apparent in hard... [Pg.16]

That the wavefunction is not much changed by solvation is seen in Fig. 4, where the hole population profile is shown for coupling to the lattice displacements and the environment separately and together. The parameters used are to=0.2 eV, a lK=0.2 eV. The lattice contribution can be included in the hole Hamiltonian (Eq. 10) by adding -2a /K to g i from Eqs. 13 and 14. [Pg.92]

Silicon crystallizes in the diamond structure,16 which consists of two interpenetrating face-centered cubic lattices displaced from each other by one quarter of the body diagonal. In zinc blende semiconductors such as GaAs, the Ga and As atoms lie on separate sublattices, and thus the inversion symmetry of Si is lost in III-V binary compounds. This difference in their crystal structures underlies the disparate electronic properties of Si and GaAs. The energy band structure in... [Pg.98]

There are several arguments that support a causality between the phonon anomalies and the pseudo gap formation in the spin fluctuation spectrum. The connecting element is a coupling of the lattice displacement of the a phonon to the occupancy and admixture of interlayer dyZ and dxz orbitals. The energy of this mode softens from 155 to 130 cm-1 in the temperature range from 200 to... [Pg.180]

Alternative numerical methods exist, where one minimises the total elastic energy E of the network with the lattice displacement vector u dE/dui = 0 for all the internal modes of the network. This gives dN simultaneous equations for the displacement vector for the N internal modes of the network. The resulting set of linear equations is solved numerically using, for example, the Jacobi conjugate gradient method (see... [Pg.103]

Fig. 21 Crystal structure (a) and temperature dependences of magnetization (b), modulation wavenumber (c), dielectric constant (d), and polarization (e) in TbMnOs crystal [38] (modulations of magnetic moment and lattice displacement are shown at the bottom left)... Fig. 21 Crystal structure (a) and temperature dependences of magnetization (b), modulation wavenumber (c), dielectric constant (d), and polarization (e) in TbMnOs crystal [38] (modulations of magnetic moment and lattice displacement are shown at the bottom left)...
Figure 2. The SWAP the abclssa Is number of unit cells a, electron density b, force on lattice by electron c, lattice displacement d, Incident phonon e, scattered phonon. (Reproduced with permission from reference 5. Copyright 1985 Nljhoff.)... Figure 2. The SWAP the abclssa Is number of unit cells a, electron density b, force on lattice by electron c, lattice displacement d, Incident phonon e, scattered phonon. (Reproduced with permission from reference 5. Copyright 1985 Nljhoff.)...

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See also in sourсe #XX -- [ Pg.16 ]




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Static Displacements of Chains Against Crystal Lattices

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