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Lasing population inversion

If the temperature were raised, more molecules would attain the excited state, but even at 50,000°C there would be only one excited-state atom for every two ground-state atoms, and stimulated emission would not produce a large cascade effect. To reach the excess of stimulated emissions needed to build a large cascade (lasing), the population of excited-state molecules must exceed that of the ground state, preferably at normal ambient temperatures. This situation of an excess of excited-state over ground-state molecules is called a population inversion in order to contrast it with normal ground-state conditions. [Pg.124]

The timing of the emission is clearly dependent on the system in use. For example, if pumping is relatively slow and stimulated emission is fast, then the emergent beam of laser light will appear as a short pulse (subsequent lasing must await sufficient population inversion). This behavior is... [Pg.125]

If a triplet-state molecule (A ) meets a singlet-state molecule (B ), a short-lived complex can be formed (an exciplex). In the latter, the molecules exchange energy, returning to its singlet state (A ) and B raised to its triplet state (B ). If the new triplet state is relatively long-lived, it can serve to produce the population inversion needed for lasing, as in the He/Ne laser. [Pg.131]

In the three-level system of Figure 9.2(b) population inversion between levels 2 and 1 is achieved by pumping the 3-1 transition. The 3-2 process must be efficient and fast in order to build up the population of level 2 while that of level 1 is depleted. Lasing occurs in the 2-1 transition. [Pg.340]

Fig. 1. The energy levels in a semiconductor. Shown are the valence and conduction bands and the forbidden gap in between where represents an occupied level, ie, electrons are present O, an unoccupied level and -3- an energy level arising from a chemical defect D and occurring within the forbidden gap. The electrons in each band are somewhat independent, (a) A cold semiconductor in pitch darkness where the valence band levels are filled and conduction band levels are empty, (b) The same semiconductor exposed to intense light or some other form of excitation showing the quasi-Fermi level for each band. The energy levels are occupied up to the available voltage for that band. There is a population inversion between conduction and valence bands which can lead to optical gain and possible lasing. Conversely, the chemical potential difference between the quasi-Fermi levels can be connected as the output voltage of a solar cell. Fquilihrium is reestabUshed by stepwise recombination at the defect levels D within the forbidden gap. Fig. 1. The energy levels in a semiconductor. Shown are the valence and conduction bands and the forbidden gap in between where represents an occupied level, ie, electrons are present O, an unoccupied level and -3- an energy level arising from a chemical defect D and occurring within the forbidden gap. The electrons in each band are somewhat independent, (a) A cold semiconductor in pitch darkness where the valence band levels are filled and conduction band levels are empty, (b) The same semiconductor exposed to intense light or some other form of excitation showing the quasi-Fermi level for each band. The energy levels are occupied up to the available voltage for that band. There is a population inversion between conduction and valence bands which can lead to optical gain and possible lasing. Conversely, the chemical potential difference between the quasi-Fermi levels can be connected as the output voltage of a solar cell. Fquilihrium is reestabUshed by stepwise recombination at the defect levels D within the forbidden gap.
In a Q-switched laser, the population inversion, usually produced in the same way as CW operation, builds up by making the cavity quality factor Q unfavorable for lasing. Then, when the pump energy stored in the laser medium is at the desired level, the Q is suddenly adjusted (electro- or acousto-optically) to release the pulse. This results in high peak powers. [Pg.603]


See other pages where Lasing population inversion is mentioned: [Pg.278]    [Pg.278]    [Pg.821]    [Pg.2859]    [Pg.2861]    [Pg.2894]    [Pg.125]    [Pg.126]    [Pg.126]    [Pg.340]    [Pg.353]    [Pg.356]    [Pg.173]    [Pg.350]    [Pg.291]    [Pg.291]    [Pg.134]    [Pg.397]    [Pg.218]    [Pg.123]    [Pg.36]    [Pg.563]    [Pg.313]    [Pg.503]    [Pg.503]    [Pg.317]    [Pg.319]    [Pg.428]    [Pg.428]    [Pg.428]    [Pg.302]    [Pg.304]    [Pg.352]    [Pg.353]    [Pg.123]    [Pg.196]    [Pg.214]    [Pg.215]    [Pg.340]    [Pg.353]    [Pg.356]    [Pg.599]    [Pg.922]   
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