Kinetics of Reactive Sputter Deposition Hysteresis Effect

Kinetics of Reactive Sputter Deposition Hysteresis Effect 

The kinetics of reactive sputter deposition, especially for deposition with a metal target and a metal compound film, is described in a model developed by Berg et al. (1989). The model is based on the balance of the compound covered fraction (0t) of the total target area ( tar) during the reactive sputter deposition. 

The sttrface coverages of the compound, 0t and 0s, are presented as functions of normalized parameters Y and a the parameter Y characterizes the relative contribution of the ion and reactive gas fluxes. The total nttmber of reactive gas molecules consumed to form the compotmd deposited on the substrate, which actually characterizes the reactive gas flow, can be expressed as 

Taking into accormt the steady-state solutions (8-99) and (8-100), the reactive gas flow can be presented as a function of the parameter Y (characterizing the contribution of the ion and reactive gas fltraes)  

The total target sputtering flux, ineluding sputtering of metal and compound, related to the ion bombardment flux can be expressed in this case as 

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I. Kinetics of Reactive Sputter Deposition Hysteresis Effect... 

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