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Kinetic deposition

The maximum surface carbon content is usually set by the gas composition via the equiUbtium constant. If the gas reaction kinetics deposit carbon at a rate which carmot be equaled by the diffusion of carbon into the steel, then the surface value may be less than the possible equiUbtium value. [Pg.214]

Application of charges and filtration may separate protein very efficiently. Electro-kinetic deposition uses voltage gradients of 1050V/cm to produce solid biomass with densities of up to 40% w/v. [Pg.181]

Finally, in 1985, the results of an extensive investigation in which adsorjDtion took place onto an aluminium oxide layer fonned on a film of aluminium deposited in vacuo onto a silicon wafer was published by Allara and Nuzzo 1127, 1281. Various carboxylic acids were dissolved in high-purity hexadecane and allowed to adsorb from this solution onto the prepared aluminium oxide surface. It was found that for chains with more than 12 carbon atoms, chains are nearly in a vertical orientation and are tightly packed. For shorter chains, however, no stable monolayers were found. The kinetic processes involved in layer fonnation can take up to several days. [Pg.2623]

Ramsden J J and Mate M 1998 Kinetics of monolayer particle deposition J. Chem. Soc. Faraday Trans. 94 783-8... [Pg.2848]

Ramsden J J 1993 Concentration scaling of protein deposition kinetics Phys. Rev. Lett. 71 295-8... [Pg.2851]

A degree of control over the kinetic selectivity of molecular sieve adsorbents can be achieved by controUed adjustment of the pore si2e. In a carbon sieve this may be accompHshed by adjusting the bum-out conditions or by controUed deposition of an easily crackable hydrocarbon. In a 2eoHte, ion... [Pg.251]

The defects generated in ion—soHd interactions influence the kinetic processes that occur both inside and outside the cascade volume. At times long after the cascade lifetime (t > 10 s), the remaining vacancy—interstitial pairs can contribute to atomic diffusion processes. This process, commonly called radiation enhanced diffusion (RED), can be described by rate equations and an analytical approach (27). Within the cascade itself, under conditions of high defect densities, local energy depositions exceed 1 eV/atom and local kinetic processes can be described on the basis of ahquid-like diffusion formalism (28,29). [Pg.395]

If the gas has the correct composition, the carbon content at the surface increases to the saturation value, ie, the solubiUty limit of carbon in austenite (Fig. 2), which is a function of temperature. Continued addition of carbon to the surface increases the carbon content curve. The surface content is maintained at this saturation value (9) (Fig. 5). The gas carburizing process is controlled by three factors (/) the thermodynamics of the gas reactions which determine the equiUbrium carbon content at the surface (2) the kinetics of the chemical reactions which deposit the carbon and (J) the diffusion of carbon into the austenite. [Pg.213]

Diffusion of Carbon. When carbon atoms are deposited on the surface of the austenite, these atoms locate in the interstices between the iron atoms. As a result of natural vibrations the carbon atoms rapidly move from one site to another, statistically moving away from the surface. Carbon atoms continue to be deposited on the surface, so that a carbon gradient builds up, as shown schematically in Figure 5. When the carbon content of the surface attains the equihbrium value, this value is maintained at the surface if the kinetics of the gas reactions are sufficient to produce carbon atoms at least as fast as the atoms diffuse away from the surface into the interior of the sample. [Pg.213]

Various plasma diagnostic techniques have been used to study the SiH discharges and results have helped in the understanding of the growth kinetics. These processes can be categorized as r-f discharge electron kinetics, plasma chemistry including transport, and surface deposition kinetics. [Pg.358]


See other pages where Kinetic deposition is mentioned: [Pg.322]    [Pg.100]    [Pg.275]    [Pg.214]    [Pg.318]    [Pg.332]    [Pg.403]    [Pg.128]    [Pg.322]    [Pg.100]    [Pg.275]    [Pg.214]    [Pg.318]    [Pg.332]    [Pg.403]    [Pg.128]    [Pg.226]    [Pg.899]    [Pg.928]    [Pg.929]    [Pg.942]    [Pg.1173]    [Pg.1330]    [Pg.1868]    [Pg.2748]    [Pg.2754]    [Pg.2938]    [Pg.7]    [Pg.256]    [Pg.432]    [Pg.156]    [Pg.285]    [Pg.178]    [Pg.179]    [Pg.181]    [Pg.388]    [Pg.514]    [Pg.43]    [Pg.47]    [Pg.368]    [Pg.368]    [Pg.494]    [Pg.61]    [Pg.518]    [Pg.520]    [Pg.521]    [Pg.522]    [Pg.537]   
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Deposit kinetics

Deposition kinetics

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