Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Junction abrupt

Figure 15.27 Fracture face (right) contrasted with corresponding, intact weldment. Note that the transition from a rough to a smooth fracture surface occurs abruptly at the junction of the weld metal with the base metal. Figure 15.27 Fracture face (right) contrasted with corresponding, intact weldment. Note that the transition from a rough to a smooth fracture surface occurs abruptly at the junction of the weld metal with the base metal.
The fabrication and characterization of atomic metal contacts have been based mainly on electro-deposition/dissolution [182] and break junction techniques (see review [134] and literatures cited therein). In particular, gold nanocontacts have been studied in great detail, due to the chemical inertness of the material, the malleability and ductility of gold. The processes of formation, evolution, and breaking of gold atomic contacts leads to step-like features in the current-distance curves [188, 189]. The abrupt changes in the current (conductance) response were... [Pg.134]

Most, but not all of the terminal units are near the outside of the dendrimer at any given time. The SAXS studies [17] of the segment density distribution have shown that there is an abrupt transition region at the outside of large PAM AM dendrimers. The combination of these two factors suggests that the terminal functionalities of dendrimers are accessible from the outside and available for chemical reactions such as attachment to surfaces, mounting of a catalyst, or for use as a crosslink junction. [Pg.274]

Operation at Reduced Pressure. To obtain uniform deposition rates and abrupt interfaces, CVD systems are often operated at reduced pressures (10.1 kPa) but with similar mass flow rates as systems operated at atmospheric pressure. As mentioned earlier, operation at reduced pressure increases the linear flow rate but keeps the Peclet number constant. This situation leads to shorter residence times and sharper junctions. [Pg.245]

The arrows above and the symbols below the interfaces indicate the transfer of the charge at each interface when the concentration of NaF in the sample is abruptly increased. It is possible to estimate the actual number of ions that are required to establish the potential difference at the interfaces. A typical value for the doublelayer capacitor is 10 5 F cm 2. If a potential difference of n = 100 mV is established at this interface, the double-layer capacitor must be charged by the charge Q = nCdi = 10 6 coulombs. From Faraday s law (6.3), we see that it corresponds to approximately 10 11 mol cm 2 or 1012 ions cm 2 of the electrode surface area. Thus, a finite amount of the potential determining ions is removed from the sample but this charge is replenished through the liquid junction, in order to maintain electroneutrality. [Pg.149]

In solid-state devices semiconductors are interfaced with other materials and junctions are formed. A junction between two semiconductors of opposite polarity is called a pn-junction. If the concentration of one type of dopant is much higher than that of the other (e.g., N > > Afo) it is called an abrupt junction (Fig. C.3). For the approximately equal doping levels we talk about, we use the term two-sided junction. A gradient of dopants is found in graded junctions. The concentrations of carriers on the two sides of the junction (subscripted) are... [Pg.356]

We have considered here the influence of dispersion asymmetry and Zee-man splitting on the Josephson current through a superconductor/quantum wire/superconductor junction. We showed that the violation of chiral symmetry in a quantum wire results in qualitatively new effects in a weak superconductivity. In particularly, the interplay of Zeeman and Rashba interactions induces a Josephson current through the hybrid ID structure even in the absence of any phase difference between the superconductors. At low temperatures (T critical Josephson current. For a transparent junction with small or moderate dispersion asymmetry (characterized by the dimensionless parameter Aa = (vif — v2f)/(vif + V2f)) it appears, as a function of the Zeeman splitting Az, abruptly at Az hvp/L. In a low transparency (D Josephson current at special (resonance) conditions is of the order of yfD. In zero magnetic field the anomalous supercurrent disappears (as it should) since the spin-orbit interaction itself respects T-symmetry. However, the influence of the spin-orbit interaction on the critical Josephson current through a quasi-ID structure is still anomalous. Contrary to what holds... [Pg.225]

Flat plates are used as covers for manways and as the channel covers of heat exchangers. Formed flat ends, known as flange-only ends, are manufactured by turning over a flange with a small radius on a flat plate, as shown in Figure 13.9a. The corner radius reduces the abrupt change of shape, at the junction with the cylindrical section, which reduces the local stresses to some extent flange-only heads are the cheapest type of formed head to manufacture, but their use is limited to low-pressure and small-diameter vessels. [Pg.987]

Doping occurs simultaneously with the growth of silicon and can induce an abrupt concentration profile in p-n junction elaboration. Nevertheless, there are certain limitations due to the phenomena of exodiffusion and autodoping. [Pg.169]

This phenomenon is again guided by the diffusion parameters temperature and diffusion coefficient. The autodoping phenomenon combined with the exodiffusion, which occurs during the rise in temperature before the growth step, explains that the profile of the dopant concentration between the epitaxial layer and the substrate cannot be abrupt. The concentration profile at the junction shows a subdoping of the substrate and an overdoping of the epitaxial layer as shown in Fig. 10.7. [Pg.171]


See other pages where Junction abrupt is mentioned: [Pg.237]    [Pg.337]    [Pg.9]    [Pg.237]    [Pg.337]    [Pg.9]    [Pg.536]    [Pg.209]    [Pg.129]    [Pg.142]    [Pg.147]    [Pg.220]    [Pg.231]    [Pg.332]    [Pg.191]    [Pg.211]    [Pg.109]    [Pg.263]    [Pg.286]    [Pg.19]    [Pg.829]    [Pg.559]    [Pg.163]    [Pg.322]    [Pg.10]    [Pg.162]    [Pg.317]    [Pg.216]    [Pg.133]    [Pg.127]    [Pg.89]    [Pg.1802]    [Pg.53]    [Pg.2672]    [Pg.227]    [Pg.18]    [Pg.18]    [Pg.459]    [Pg.1675]    [Pg.670]    [Pg.3199]    [Pg.46]    [Pg.36]   
See also in sourсe #XX -- [ Pg.559 ]




SEARCH



Abrupt

© 2024 chempedia.info