Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Ion-beam lithography

Bowden, An introduction to microlithography, in Introduction to Microlithography, L.F. Thompson, C.G. Willson, and M.J. Bowden, Eds., pp. 11, 12, American Chemical Society, Washington, DC (1994). [Pg.169]

MelngaiUs, Focused ion beam technology and applications, J. Vac. Sci. Technol. B 5, 469 (1987) K. Hosond, H. Morimoto, Y. Watanabe, and T. Kato, Proc. SPIE 923, 84 (1988). [Pg.169]

Ion-beam lithography Ion beam mixing Ion beam processing Ion beams Ion-beam sputtering Ion channels Ion chromatogram Ion chromatography... [Pg.520]

Ion-beam-induced epitaxy crystallization (IBIEC), 14 447-448 Ion-beam lithography... [Pg.487]

High resolution negative resists are needed for masked ion beam lithography (MIBL) and for the fabrication of MIBL masks by E-beam lithography (EBL). The MOTSS copolymer resists were developed to obtain the resolution of fine features that a bilevel resist can best provide. The flexibility afforded by choosing the structure of the HS, the copolymer composition, and the molecular weight allows a resist to be tailored by simple synthesis adjustments to have the particular sensitivity and etch protection which best suits the application. [Pg.193]

MLR systems offer many advantages in optical, e-beam, x-ray, and ion-beam lithography. An advantage common to all imaging methods is in enhancement of resist sensitivity. As the resolution and the aspect ratio requirements are separated in an MLR system, faster resists that are usable only for low aspect ratio images can now be candidates for the top layer. Other advantages of MLR systems differ from one imaging method to the other. They will be discussed separately. [Pg.290]

For example, see Lazarus, R. M. Dixit, S. S. Proc. SPIE Conf, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI 1987, 773, 68. [Pg.379]

Using EBL or ion beam lithography (IBL) a variation of shapes and dimensions can bee realized even down to 10 nm in size. With EBL large areas cannot be made accurately due to the problems with the long-range coherence of the e-beam writer and also the throughput is very low. But it is a very flexible method for the fabrication of nanostructures of arbitrary shapes for research [4]. Recently it has been shown that EB and IB projection methods can solve the problems with the throughput and mis-coherence... [Pg.263]

See other pages where Ion-beam lithography is mentioned: [Pg.134]    [Pg.393]    [Pg.187]    [Pg.134]    [Pg.192]    [Pg.388]    [Pg.9]    [Pg.11]    [Pg.15]    [Pg.82]    [Pg.82]    [Pg.287]    [Pg.299]    [Pg.361]    [Pg.34]    [Pg.42]    [Pg.47]    [Pg.85]    [Pg.89]    [Pg.98]    [Pg.520]    [Pg.134]    [Pg.135]    [Pg.209]    [Pg.209]    [Pg.414]    [Pg.110]    [Pg.114]    [Pg.458]    [Pg.246]    [Pg.365]    [Pg.457]    [Pg.37]    [Pg.353]    [Pg.342]    [Pg.3311]    [Pg.134]   
See also in sourсe #XX -- [ Pg.8 , Pg.10 , Pg.82 ]

See also in sourсe #XX -- [ Pg.263 ]

See also in sourсe #XX -- [ Pg.37 ]

See also in sourсe #XX -- [ Pg.111 ]



SEARCH



Focused ion beam lithography

Ion beams

Types of ion-beam lithographies

© 2024 chempedia.info