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Internal vibrational relaxation

Fig. 13. Schematic model for electron injection of RuN3. Following MLCT excitation of the RuN3-sensitized Ti02 nanocrystalline film, electron injection occurs from both excited states of the dye, MLCT and MLCT, into the conduction band (CB) of the semiconductor. GS ground state of RuN3. Pathway A electron injection from the initially excited delocalized MLCT excited state. Pathway A2 ISC and localization in the MLCT excited state. Pathway B electron injection from the hot MLCT excited state of the attached bipyridine ligand (not observed in the present study). Pathway C internal vibrational relaxation in the MLCT excited state of the non-attached bipyridine ligand. Pathways D and E ILET between the bipyridine ligands and ensuing electron injection. Fig. 13. Schematic model for electron injection of RuN3. Following MLCT excitation of the RuN3-sensitized Ti02 nanocrystalline film, electron injection occurs from both excited states of the dye, MLCT and MLCT, into the conduction band (CB) of the semiconductor. GS ground state of RuN3. Pathway A electron injection from the initially excited delocalized MLCT excited state. Pathway A2 ISC and localization in the MLCT excited state. Pathway B electron injection from the hot MLCT excited state of the attached bipyridine ligand (not observed in the present study). Pathway C internal vibrational relaxation in the MLCT excited state of the non-attached bipyridine ligand. Pathways D and E ILET between the bipyridine ligands and ensuing electron injection.
Figure 7.3. Explanation for heat release in NIR sensitizers. Excitation from the lowest vibrational level of the So into a higher vibrational level of the of the Si results in fast vibrational relaxation (VJ into the lowest vibrational level of the same excited state. The lowest vibrational mode of the Si couples in NIR sensitizers very efficient with higher vibrational modes of the ground state So resulting in the release of heat. This occurs fast in NIR dyes and additional heat can be generated by internal vibrational relaxation of higher modes of the ground state to the lowest vibrational mode of the Sg (V"i v". Electron transfer of the Si with A and fluorescence occur as competing processes... Figure 7.3. Explanation for heat release in NIR sensitizers. Excitation from the lowest vibrational level of the So into a higher vibrational level of the of the Si results in fast vibrational relaxation (VJ into the lowest vibrational level of the same excited state. The lowest vibrational mode of the Si couples in NIR sensitizers very efficient with higher vibrational modes of the ground state So resulting in the release of heat. This occurs fast in NIR dyes and additional heat can be generated by internal vibrational relaxation of higher modes of the ground state to the lowest vibrational mode of the Sg (V"i v". Electron transfer of the Si with A and fluorescence occur as competing processes...
Energy level diagram for a molecule showing pathways for deactivation of an excited state vr Is vibrational relaxation Ic Is Internal conversion ec Is external conversion, and Isc Is Intersystem crossing. The lowest vibrational energy level for each electronic state Is Indicated by the thicker line. [Pg.425]

Another form of radiationless relaxation is internal conversion, in which a molecule in the ground vibrational level of an excited electronic state passes directly into a high vibrational energy level of a lower energy electronic state of the same spin state. By a combination of internal conversions and vibrational relaxations, a molecule in an excited electronic state may return to the ground electronic state without emitting a photon. A related form of radiationless relaxation is external conversion in which excess energy is transferred to the solvent or another component in the sample matrix. [Pg.425]

The events taking place in the RCs within the timescale of ps and sub-ps ranges usually involve vibrational relaxation, internal conversion, and photo-induced electron and energy transfers. It is important to note that in order to observe such ultrafast processes, ultrashort pulse laser spectroscopic techniques are often employed. In such cases, from the uncertainty principle AEAt Ti/2, one can see that a number of states can be coherently (or simultaneously) excited. In this case, the observed time-resolved spectra contain the information of the dynamics of both populations and coherences (or phases) of the system. Due to the dynamical contribution of coherences, the quantum beat is often observed in the fs time-resolved experiments. [Pg.6]

The radiationless transition between two states of same spin is called internal conversion, the one occuring with inversion of spin being termed intersystem crossing. In both processes the excess energy is liberated as heat. All these transitions between different electronic states are customarily preceded by vibrational relaxation, i.e. the deactivation from a higher vibronie level to the v0-level of the same electronic state (Fig. 5). [Pg.14]

Subsequent to the formation of a potentially chemiluminescent molecule in its lowest excited state, a series of events carries the molecule down to its ground electronic state. Thermal deactivation of the excited molecule causes the molecule to lose vibrational energy by inelastic collisions with the solvent this is known as thermal or vibrational relaxation. Certain molecules may return radia-tionlessly all the way to the ground electronic state in a process called internal conversion. Some molecules cannot return to the ground electronic state by internal conversion or vibrational relaxation. These molecules return to the ground excited state either by the direct emission of ultraviolet or visible radiation (fluorescence), or by intersystem crossing from the lowest excited singlet to the lowest triplet state. [Pg.79]

The much larger energy difference between Si and S0 than between any successive excited states means that, generally speaking, internal conversion between Si and S0 occurs more slowly than that between excited states. Therefore, irrespective of which upper excited state is initially produced by photon absorption, rapid internal conversion and vibrational relaxation processes mean that the excited-state molecule quickly relaxes to the Si(v0) state from which fluorescence and intersystem crossing compete effectively with internal conversion from Si. This is the basis of Kasha s rule, which states that because of the very rapid rate of deactivation to the lowest vibrational level of Si (or Td, luminescence emission and chemical reaction by excited molecules will always originate from the lowest vibrational level of Si or T ... [Pg.52]

We saw in the last section that because of the rapid nature of vibrational relaxation and internal conversion between excited states an electronically-excited molecule will usually relax to the lowest vibrational level of the lowest excited singlet state. It is from the Si(v = 0) state that any subsequent photophysical or photochemical changes will generally occur (Kasha s rule). [Pg.53]

When the excited triplet state is populated, rapid vibrational relaxation and possibly internal conversion may occur (if intersystem crossing takes place to an excited triplet of greater energy than Ti). Thus the excited molecule will relax to the lowest vibrational level of the Ti state, from where phosphorescence emission can occur in compliance with Kasha s rule. [Pg.70]

Internal conversion is a non-radiative transition between two electronic states of the same spin multiplicity. In solution, this process is followed by a vibrational relaxation towards the lowest vibrational level of the final electronic state. The excess vibrational energy can be indeed transferred to the solvent during collisions of the excited molecule with the surrounding solvent molecules. [Pg.37]

When a molecule is excited to an energy level higher than the lowest vibrational level of the first electronic state, vibrational relaxation (and internal conversion if the singlet excited state is higher than Si) leads the excited molecule towards the 0 vibrational level of the Si singlet state with a time-scale of 10 B-10 11 s. [Pg.37]

The lifetime of a homogeneous population of fluorophores is very often independent of the excitation wavelength as the emission spectrum (but there are some exceptions). In fact, internal conversion and vibrational relaxation are always very fast in solution and emission arises from the lowest vibrational level of state Si. [Pg.44]

In the experiment done under conditions of inefficient spin-lattice relaxation the triplet spin states originally produced are retained during internal conversion and vibrational relaxation. Important conclusions about the routes of intersystem crossing can thus be obtained from a study of the population of the triplet sublevels, the so-called "spin alignment . [Pg.42]

Photoelectron ejection from ArH in nonpolar solvents has been interpreted in terms of autoionizing excited states with x = 10 " sec, which can also be internally converted to the Do states [34,35,136,137]. It is assumed that t-Sf in the vibrational excited state ((t-St ) ) undergoes vibrational relaxation on the time scale of 10 " sec to yield t-St , which has a long enough lifetime v = k/y to be quenched by Bp via ET involving (t-St/Bp )soiv (Scheme 13). = 0.06 0.02 suggests that (t-St ) undergoes photoelectron ejection and... [Pg.677]


See other pages where Internal vibrational relaxation is mentioned: [Pg.141]    [Pg.166]    [Pg.102]    [Pg.141]    [Pg.166]    [Pg.102]    [Pg.1143]    [Pg.425]    [Pg.400]    [Pg.50]    [Pg.60]    [Pg.70]    [Pg.71]    [Pg.351]    [Pg.79]    [Pg.374]    [Pg.49]    [Pg.35]    [Pg.41]    [Pg.257]    [Pg.2]    [Pg.677]    [Pg.679]    [Pg.193]    [Pg.397]    [Pg.211]    [Pg.25]    [Pg.259]    [Pg.436]    [Pg.37]    [Pg.37]    [Pg.272]    [Pg.211]    [Pg.267]    [Pg.108]    [Pg.125]   
See also in sourсe #XX -- [ Pg.102 ]




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