Insulator-semiconductor interface electrical potential

Since extrinsic silicon photoconductor material has high resistivity at cryogenic temperatures it can be used to form the substrate of an accumulation mode CCD as shown in Fig. 6.11. With an accumulation mode MIS structure the gates are biased so that majority carriers are stored and transferred down the insulator semiconductor interface. Local potential wells are formed under the gates however the dynamics of the charge transfer process will be very different from those for an inversion mode device since with an accumulation mode device the transverse electric fields will extend all the way to the back contact instead of being confined to the depletion region of an inversion mode structure. 

To obtain a relationship between the voltage VK applied to the metal and the surface potential Vv, we assume a continuity of the electric field at the insulator-semiconductor interface that implies... 

The success of CD CdS in photovoltaic cells has driven related research with potential applications in other semiconductor devices. Since the CD process seems to play a role in the favorable properties of the CdS windows by decreasing interface recombination, studies of its passivation properties on other interfaces and surfaces have been carried out, with considerable success. For example, when a very thin film (ca. 6 nm) was deposited between InP and SiOi, the resulting reduction of the interface state density led to improved electrical properties of metal-insulator-semiconductor capacitors and field effect transistors (FETs)... 

Flat-band potential — In the energy barrier formed for example at metal-semiconductor junctions (- Schottky barrier), metal-insulator-semiconductor junctions, and solution-semiconductor interfaces the flat-band potential corresponds to the potential at which the electric field equals zero at the semiconductor interface, i.e., there is no -+ band bending. In case of solution-semiconductor interfaces, the flat-band potential corresponds to the condition of absence of excess charge and consequently, depletion layer, in the semiconductor. See also -> Mott-Schottky plot, and -> semiconductor. 

ABSTRACT The chemical and electrical implications of charge transfer are discussed. The basic differences between chemical and electrochemical reactions are highlighted. Electrochemical kinetics and its various aspects are treated in detail. Tunneling, electronic, and surface states are discussed in the context of interfaces. A current potential relation at semiconductor-solution interfaces receives attention, as do insulator-solution interfaces. 

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