Insulated gate bipolar transistors

Insulated dye developers, 19 285-286 Insulated gate bipolar transistors (IGBTs), silicon carbide in, 22 539—540 Insulating brick, ASTM classifications and specifications for, 21 508, 509t Insulating castables, classification of, 21 510t... 

Power Conversion Section, 2005a, Gate Drive for IGBT (Insulated Gate Bipolar Transistor). Available from abb.com downloads. 

Note In an effort to combine the best of both worlds, a combo device called the IGBT (insulated gate bipolar transistor) is also often used nowadays. It is driven like a mosfet (voltage-controlled), but behaves like a bjt in other ways (the forward drop and switching speed). It too is therefore suited mainly for low-frequency and high-current applications, but is considered easier to drive than a bjt. 

An AC Voltage Source Inverter drive for a mine hoist typically consists of an input (converter) section, DC link and output (inverter) section. Figure 3 shows the major components in a low voltage regenerative drive using Insulated Gate Bipolar Transistors (IGBT s). 

Zero-current-transition PWM converters (Hua, Leu, and Lee, 1992) Figure 10.91 shows an example of zero-current transition boost converter. This approach is useful in high power converters when insulated gate bipolar transistors (IGBTs) or bipolar transistors are used as the switching devices. 

Insulated gate bipolar transistor (IGBT) A power semiconductor which can be turned on like a MOSFET with a collector to emitter conduction drop similar to a bipolar transistor. 

A digital signal processor (DSP) is used to monitor the input and output parameters of the APLC. The DSP then makes any needed adjustment in the amount of voltage compensation and current injection by modifying the switching characteristics of the insulated-gate bipolar transistors (IGBTs) in the APLC. 

Tamilselvan, P., Wang, P. Pecht, M. 2013a. A multiattribute classification fusion system for insulated gate bipolar transistor diagnostics. Microelectronics Reliability 53(8) 1117-1129. 

The magnet current can be controlled with the aid of gate-turn-on thyristors (GTOs), metal-oxide semiconductor field-effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs). The latter are most powerful with respect to maximum current... 

IGBT (insulated gate bipolar transistor) for high-current applications (>50 A)... 

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