Indium-tin oxide anode

J.S. Kim, R.H. Friend, and F. Cacialli, Improved operational stability of polyfluorene-based organic light-emitting diodes with plasma-treated indium-tin-oxide anodes, Appl. Phys. Lett., 74 3084-3086, 1999. 

F. Steuber, J. Staudigel, M. Stossel, J. Simmerer, and A. Winnacker, Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode, Appl. Phys. Lett., 74 3558-3560, 1999. 

F.R. Zhu, B.L. Low, K.R. Zhang, and S.J. Chua, Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices, Appl. Phys. Lett., 79 1205-1207, 2001. 

Indium-tin-oxide anode, 22 215, 216 Indium trichloride, 14 197, 201 Indo-3-lyl acetic acid, 13 284 Indole-3-acetic acid, 13 35, 38. See also Indoleacetic acids (IAAs) Indole-3-butyric acid, 13 25t... 

Organic Light-Emitting Diodes (OLED) and Polymer Light-Emitting Diodes (PLED) based on the mechanism foreseen by Marcus have been realized in practice. PLEDs are successively formed from an Al, Mg or Ca cathode, an organic conductive polymer and an ITO (Indium, Tin, Oxide) anode, as schematically illustrated in Fig. 36.31. 

Chan, I. M. and Hong, R C. N. 2003. Plasma treatment of indium tin oxide anodes in carbon tetrafluorinde (CF4)/oxygen (O2) to improve the performance of organic light-emitting diodes. Thin Solid Films 444 254. 

Morgado, J., et al. 2003. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes. J Phys D-Appl Phys 36 434-438. 

B.J. Chen, X.W. Sun, B.K. Tay, L. Ke and S.J. Chua, Improvement of efficiency and stability of polymer light-emitting devices by modifying indium tin oxide anode surface with ultrathin tetrahedral amorphous carbon film, Appl. Phys. Lett. 86, 063506/1-063506/3 (2005). 

Variation of light output with bias voltage for P(PV) diodes fabricated with indium/tin oxide anode and a range of metals as cathode (bias is reversed for Au as indicated). (Quantum efficiencies are indicated against each data set. After Reference [89], reproduced with permission. 

Field emission measurement was carried out on the ZnO nanorods array grown on silicon, as shown in Figure 5.7(a). The experiments were performed in a vacuum chamber with a base pressure of 1 x 10 Torr. The distance between an indium tin oxide anode and the sample is 150 pm. The measured emission area is 0.20 cm. The emission current-voltage characteristics are analyzed using the... 

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