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INDEX plasma nitriding

Silicon nitride films deposited in para 11 el-pi ate, plasma-enhanced CVD reactors will be discussed in greater detail in a later chapter. However, they typically have a refractive index on the order of 2.0, partly because of hydrogen incorporated into the layer, and the ECR films appear similar. Also, as... [Pg.62]

Ellipsometric measurements of the PEO 900 kDa physically adsorbed layer on the plasma cleaned silicon nitride coated wafer indicate that the PEO layer thickness in air is 1.94 + 0.10 nm using a measured refractive index of 1.94 for silicon nitride and an assumed refractive index of 1.45 for PEO in air. [Pg.270]


See other pages where INDEX plasma nitriding is mentioned: [Pg.436]    [Pg.237]    [Pg.126]    [Pg.136]    [Pg.406]    [Pg.36]    [Pg.207]    [Pg.80]    [Pg.1264]    [Pg.338]    [Pg.393]   
See also in sourсe #XX -- [ Pg.189 , Pg.193 ]




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