Impurities in semiconductors

The passivation of deep level defects and shallow impurities in semiconductors by hydrogen has been studied extensively in recent years (Pearton et al., 1987, 1989 Haller, 1989). For Si in most cases, complexing with hydrogen eliminates the electrical activity of a defect.Once passivated, the... 

Milnes, A.G. (1973). Deep Impurities in Semiconductors. John Wiley Sons. Mogro-Campero, A., Love, R.P., and Schubert, R. (1985). J Electrochem. Soc. 132, 2006. 

Haller, E.E. (1989). Proc. Third Inti. Conference on Shallow Impurities in Semiconductors, ed. Monemar B., Inst, of Phys. Conf. Series 95, 425. 

Theoretical techniques for studying impurities in semiconductors can be categorized according to two criteria one, the geometrical arrangement, and two, the method for treating the electron-electron interactions. 

Briddon, P., and Jones, R. (1989). Proceedings of the Third International Conference on Shallow Impurities in Semiconductors, Linkoping, 1988, edited by B. Monemar. IOP Conf. Ser. (IOP London, 1989), p. 459. 

M. Stavola, Vibrational Spectroscopy of Light Element Impurities in Semiconductors... 

The applications for ICP-MS are broadly similar to those for ICP-AES, although the better sensitivity of the former has resulted in applications such as the determination of ultra-low levels of impurities in semiconductors and long-lived radionuclides in the environment. Also, ICP-MS is better suited to the determination of the lanthanide series of elements in many geological applications because the mass spectrum is much simpler than the equivalent optical spectrum. 

Impurities in semiconductors, which release either free electrons or free holes (the absence of an electron in an otherwise filled sea of electrons), also give rise to optical properties at low energies below the minimum band gap (e.g., 1.1 eV for Si) that are characteristic of the Drude theory. Plasma frequencies for such doped semiconductors may be about 0.1 eV. 

Trace element accelerator mass spectrometry (TEAMS) can also be applied for depth profiling as demonstrated for H, , , A1 and Si implants (and impurities) in semiconductor GaN substrate.115... 

Milnes, AG, Deep Impurities in Semiconductors, John Wiley and Sons, New York, 1973. 

Ravi, K. V. Imperfections and Impurities in Semiconductor Silicon Wiley New York, 1981. 

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