Implants processing advances

Fig. 14.6. Application of ion implantations in advanced CMOS structure at several stages of the process, (a) Ion implants for retrograde well formation, punch-through-stop, and threshold voltage adjust (b) shallow source/drain (S/D) implant and (c) halo implant...

Additive processes ion implantation, 361 metal layer deposition, 361 resist requirement, 361 vapor dopant diffusion, 361 Additives for F scavenging, 415 Advanced very-large-scale integrated-circuit package, 490, 492 Aluminum... 

Today, a typical process flow for advanced ICs consists of 300 to 500 steps, 30% of which are wafer cleaning steps." Many process steps during IC fabrication may introduce contamination, which must be cleaned before the next process step. For example, in processes such as steam oxidation, resist etching, and ion implantation, metallic contamination typically introduces a surface concentration of 10 to lO Vcm. The need for wafer cleaning can be separated into three areas (1) preparation of the wafer surfaces for oxidation, diffusion, deposition, and metallization (2) preparation for the application of photoresist and (3) removal of photoresist after the etching process." ... 

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