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Impedance Behavior of Supercapacitors Based on Pseudocapacitance

The concept of pseudocapacitance had arisen early in electrochemistry, being associated with potential-dependence of chemisorption of H atoms, e.g. at Pt (Conway and Gileadi [1962]), and of anions such as the halide ions which are adsorbed at a variety of electrode metals, with partial charge transfer (electrosorption valency), inclnding Hg, (Schnltze and Koppitz [1976]). [Pg.489]

Since such surface redox reactions usually involve Faradaic charge transfer, the specific pseudocapacitances that can be manifested are some five to ten times larger than the specific double-layer capacitance (always present and significant at aU electrode interfaces) at the same electrode. Hence such pseudocapacitor systems are of importance for practical development as has been the case with RUO2, but mainly for military applications owing to the high cost of that material. [Pg.489]

Pseudocapacitance can arise in several distinguishable ways that can be summarized as follows  [Pg.489]

Li into MA2 X = occupancy fraction of layer lattice sites (e.g. for Li in TiS2  [Pg.490]

M + S -1- ze - S.M (S = surface lattice sites) 6 = 2-dimensional site occupancy fraction [Pg.490]


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