Illumination current-voltage characteristic

Figure 5.27 Illuminated current-voltage characteristics of the n-CdS/p-CdTe heterojunction devices (a) for CdS Im deposited without STA and (b) for CdS Im deposited with STA.

Some of the PVK films have been redissolved in chlorobenzene and then redried either in absence or in presence of an electric field. Then, the illuminated current-voltage characteristics were measured. 

Fig. 9.9 Current-voltage characteristics under chopped illumination (= AMI) of a nanocrystalline (4—5 nm) CdSe film, deposited by CD, in a polysulphide electrolyte. The two characteristics are for as-deposited CdSe (top) and after etching with dilute HCl (bottom). (After Ref. 67.)...

Fig. 9.10 Chopped illumination (100 mW-cm ) current-voltage characteristics of a nanocrystalline PbSe fihn deposited from a citrate/selenosulphate bath at 60°C. The electrolyte is the original solution from which the film was deposited. (After Ref. 83.)...

To compare quantitatively the current-voltage characteristic of an illuminated electrode, given by formula (31), with experimental data, Butler (1977) and Wilson (1977) measured the photocurrent, which arises in a cell with an n-type semiconductor photoanode ( 2, W03) when irradiated with monochromatic light at a frequency satisfying the condition ha>> Eg. In this case a light-stimulated electrochemical reaction of water oxidation with oxygen evolution... 

Figure 11 Current-voltage characteristics for N3-dye-sensitized Ti02 solar cells under illumination and dark using the electrolyte with and without TBP.

Analysis of Current-Voltage Characteristics of Illuminated Cadmium Selenide-Polysulfide Junctions... 

Figure 2. Current-voltage characteristics of the cell cond. glass/Pblg + RbAgJs/ RbAgsls/Ag + RbAgJg/cond. glass under chopped illumination (200 mW/cm2) at 25°C (voltage scan rate 25 mV/s)...

Under illumination with a light source, a typical solar cell exhibits the current-voltage characteristics shown in Figure 3. The current drawn by the cell when the terminals are connected to each other is the short circuit current (7SC, in mA/cm2). In the presence of an external load with infinite resistance (open circuit condition), the voltage developed is the open-circuit voltage (Voc, in V). 

The current-voltage characteristics of the ITO/polymer 22 and 23/C60/Al devices under illumination with simulated solar light (100 mW/cm2). 

FIGURE 7. Current-voltage characteristic of the device ITO/PEDOT PSS/polymer 30 PCBM/A1 under illumination with simulated AM 1.5 solar light. 

The principal method of characterizing solar-cell performance is the measurement of conversion efficiency while the cell is exposed to 1 sun illumination (—100 mW cm-2). The conversion efficiency is determined by measuring the current - voltage characteristic (see Fig- 8), locating the maximum power point (Pm = JmVm), and also measuring the solar insolation... 

Fig. 8. Current-voltage characteristic of a p-i-n cell fabricated on a glass substrate r]= 10.1%, area = 1.09 cm2. Vx = 0.84 V, Jm — 1.78 mA cm-2, FF = 0.676, illumination = 98.62 mW cm-2, T= 25.7°C. [From Catalano et al., Attainment of 10% conversion efficiency in amorphous silicon solar cells. Conf. Rec. IEEE Photovoltaic Spec. Conf., Vol. 16, 1982 IEEE.]...

Figure 15.4 Current-voltage characteristics of quasi-transparent, nanocrystalline, dye-sensitized soiar ceiis operating with moiten saits as the electrolyte and redox mediator (90% 1-ethyt-3-methytimidazoiioumtriflate, 10% 1-hexyt-3-methylimidazoliumidodide, 5 mM y measured under 0.020 AMI. The irradiation was aged under AMI as a function of illumination time [8]. (Reprinted by permission of the Publisher, The Electrochemicai Society)...

Fig. 10.3. Schematic of the current-voltage characteristics of a p-i-n sensor in the dark and under illumination.

The current-voltage characteristics of an illuminated semiconductor electrode in contact with a redox electrolyte can be obtained by simply adding together the majority and minority current components. The majority carrier component is given by the diode equation (Eq. 17) while the minority carrier current (iph) is directly proportional to the photon flux (see, e.g., Eq. 24). Thus, the net current is given by... 

Figure 15-27. Current-voltage characteristics of a Ca/MEH-PPV [6,6]PCBM/ITO device in the dark (open circles) and under 20 mW/cm illumination at 430 nm (sohd circles) (reproduced by permission of the American Association for the Advancement of Science from Ref.

Fig. 7 Current-voltage characteristics of a polymer solar cell under illumination (solid line) and in the dark (broken line). The various situations (a-d) from Fig. 5 are shown for comparison...

Fig. 30 Photovoltaic properties of an MDMO-PPV based polymer-fullerene solar cell with an active area of 0.1 cm. a External quantum efficiency (EQE) of [70]PCBM MDMO-PPV cells, spin-coated from chlorobenzene (triangles) and ODCB (squares) and of [60]PCBM MDMO-PPV devices spin-coated from chlorobenzene (open circles) b current-voltage characteristics of [70]PCBM MDMO-PPV devices, spin-coated from ODCB in the dark (open circles) and under illumination (AM 1.5, 1000 W/m squares). The inset shows the I-V characteristics in a semilogarithmic plot. (Reproduced with permission from [170], 2003, Wiley-VCH)...

The current-voltage characteristic of an ideal p-n junction is / = IJexp qV/mkT) - 1 ], where q is the electron (hole) charge, m is the ideality factor, 1 < m < 2, and f the saturation current. Under applied reverse bias, the current through the junction is limited to I. Illuminating a reverse-biased diode with photons of energy greater than E... 

Fig. 4.11. (a) Current-voltage characteristics of P3HT PCBM photodiodes under varying levels of 633 nm monochromatic illumination. See main text on pages 118 and 119 for further details about the devices, (b) The intensity dependence of the short-circuit photocurrent for the same device (Prom [21] - Reproduced by permission of... 

Figure 23. Comparison of calculated current-voltage characteristics of n-type semiconductor-electrolyte junction device under illumination of 1 mA cm-2 (equivalent) photon flux.169 Parameters used are LD = 0.5 x 10-4 cm, 7V = 1016cm3, a = 3 x 104cm 1, nt = 107cm-3, e = 12, AV C = 0.7 V, r = 10-9 sec, and the electron and hole exchange current parameters are 1O 10 mA cm-2 and 10-5 mA cm-2, respectively. (a) Gartner s (Butler s) model [Eq. (103)]. (b) Reichman s model considering both electron and hole currents but neglecting the space charge recombination, (c) Reichman s model with the space charge recombination, (d) As (b) but in dark.

J. F. McCann and D. Haneman, Recombination effects on current-voltage characteristics of illuminated surface barrier cells, J. Electrochem. Soc. 129 (1982) 1134-1145. 

Fig. n.78 A current-voltage characteristic l(V) from a photovoltaic cell without and with illumination (dark and light characteristics). Uc is the short-circuit photocurrent, Voc the open-circuit voltage, and MPP the maximum-power point, where the power is Pmax-... 

Eigure 11.21 compares the experimental current-voltage characteristics without illumination (dark characteristic) and under white-light illumination (light characteristic) for the two-layer system ITO/CuPc (30nm)/C60 (30nm)/Al and for... 

Current-voltage characteristics of an OPD which consists of ITO (150nm)/PFO with iridium derivatives (30rtm)/CuPc (30rtm)/Au (30nm) under dark and violet light by Xe arc lamp (X=380nm) irradiation. Three kinds of devices are shown for PFO, PFO with FIrpic, and PFO with (btp)2lr(acac). Closed and open symbols show photocurrent in dark and illuminated conditions, respectively. 

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