Huang-Rhys factor vibrational relaxation

Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots (QDs) in SiOa matrix is considered. Interaction of confined holes with optical phonons is studied. The Huang-Rhys factor governing intraband multiphonon transitions induced by this interaction is calculated. The new mechanism of nonradiative relaxation based on the interaction with local vibrations in polar glass is studied for electrons confined in Si QDs. 

Figure 2 Emission spectrum fit with Equation (1). The value of E, the average of medium frequency vibrational modes contributing to nonradiative relaxation, ht/, the degree of excited state distortion, proportional to the Huang Rhys factor S, and the degree of inhomogeneous broadening of vibronic...

Here, p = AEq o/ eff is the dimensionless energy gap between the upper state and the closest lower-energy state in units of the effective vibrational energy, Veff (cm ). C is the electronic factor, and S is the Huang-Rhys dimensionless excited-state distortion parameter in units of vibrational quanta v ff. As shown in Eq. (2), /c ,p is strongly dependent onp. Additionally, for a given reduced energy gap p, the introduction of even small excited-state distortions, S, can rapidly enhance the radiationless multiphonon relaxation rate such that this dominates the total 0 K relaxation. This model is easily extended to elevated temperatures, where substantial increases in may be observed [7,8]. 

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