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Homopolar generator

Ghoroghchian J, Bockris JOM (1985) Use of a homopolar generator in hydrogen production from water. Int J Hydrogen Energy 10 101-112... [Pg.112]

Fig. 7.191. Schematic diagram of an in situ homopolar generator and electrolyzer (one-unit system). (Reprinted with permission from J. Ghoroghchian and J. O M. Bockris, Int. J. Hydrogen Energy 10 101, Fig. 1,1985.)... Fig. 7.191. Schematic diagram of an in situ homopolar generator and electrolyzer (one-unit system). (Reprinted with permission from J. Ghoroghchian and J. O M. Bockris, Int. J. Hydrogen Energy 10 101, Fig. 1,1985.)...
However, and as for all the processes, EDBM presents limits [23]. The performances of a water splitter are controlled by the permselectivities of the individual component membranes and by diffusive transport. Figure 21.7 illustrates the various processes which contribute to the overall current efficiency. Zone 1 concerns the specific process which generates acid and base from salt and water. Competing with this are the undesirable processes, which reduce the current efficiency. Zone 2 represents the loss of permselectivity of each homopolar layers of the BPM. In the three-compartment configuration (Figure 21.5), this factor directly acts on the purity of the acid and base produced. Zone 3 represents the loss of permselectivity of the associated homopolar membranes. Zone 4 concerns the diffusional losses due to the concentration gradients, which significantly occur for poorly ionized small molecules (HF, NH3, SO2, etc.). [Pg.589]

So far we have been dealing with various forms of the "response" to displacements of atoms. In Section 6 also certain electric fields have been studied, we benefited from the fact that displacing atoms in GaAs generates dipoles and therefore electric fields all the reasonings of Section 6 were, however, limited to polar crystals and e.g. determination of static dielectric constant e as in Section 6.2 would be impossible in Ge or other homopolar substances. From the point of view of studying dielectric properties, the main drawback of Section 6 was our dependence upon the various displacement patterns the electric fields could not be varied at will, as an independent variable. The present Section summarizes the most recent applications of the DF which tend to fill this blank and to open the way to "direct" treatment of dielectric properties of semiconductors, within the framework of the Density Functional. They are the treatment of constant macroscopic electric field imposed from outside (Section 8.1) and "direct" evaluation. of the individual elements of the inverse dielectric matrix s ("q + +"g ) (Section 8.2). [Pg.295]

The decrease of the FSDP was correlated to the reduction in the number of GeSe4 tetrahedral units. Thus, while the proportion of fourfold Ge centered motifs decreases, the proportion of three-fold and miscoordinated Ge atoms increases. Also, the proportion of Se-Se homopolar bonds increases along with temperature generating an important change in the Se local environment. This study showed that the breakdown of the IRO is due to the appearance of various structural motifs, leading to a network in which the tetrahedral predominant coordination is replaced by a coexistence of... [Pg.318]


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See also in sourсe #XX -- [ Pg.90 ]




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