Hole numbers

Thus, an orbital description of the motion of an electron contains the same information conveyed by the holes made by darts in a dartboard. After the board has been used in many games, the distribution of holes shows how successful earlier players had been in their scoring. There are many holes near the bullseye and, moving away from it, there is a regular decrease in the number of holes per square centimeter of dartboard. At any given distance from the bullseye, the density of dart holes (number per square centimeter) is a measure of the probability that the next throw will (and there. 

Fig. 13. Influence of superficial gas velocity v (left hand diagram), hole velocity Vl (right hand diagram) and hole number Zl of sparger on reference floe diameter dpyfor bubble columns D = 0.4 m H= 1.08 m...

The compound will be stoichiometric, with an exact composition of MX10ooo when the number of metal vacancies is equal to the number of nonmetal vacancies. At the same time, the number of electrons and holes will be equal. In an inorganic compound, which is an insulator or poor semiconductor with a fairly large band-gap, the number of point defects is greater than the number of intrinsic electrons or holes. To illustrate the procedure, suppose that the values for the equilibrium constants describing Schottky disorder, Ks, and intrinsic electron and hole numbers, Kc, are... 

Fig. 5. Location of Zone B 2008 and 2009 drill holes (numbered dots) superimposed on the total field aeromagnetio image, airborne radiometric anomalies (oontoured), and EM conductor picks (dark dots). Note the highly disrupted nature of the EM oonduotor pioks in the vicinity of Zone B.

Here t may represent Is or j, whereas z-projection of the quasispin operator is determined by the difference between the particle number operator and the hole number operator in the pairing state (a, / )... 

Bohlen, J., Wolff, J., Kirchhelm, R. (1999) Determination of free-volume and hole number density in polycarbonates by positron lifetime spectroscopy . Marcromolecules, 32,3766. 

Sphere packing Type of hole Number Maximum radius of interstitial sphere... 

In all three experiments, about seven holes (7.3 in EXP. 1 6.9 in EXP. 2 7.1 in EXP. 3) on average are needed for a single SiC pair to be removed. These results are also consistent with the hole number calculated for triangular porous SiC formation and the PECE reported by Shor and Kurtz [8]. This implies that all the photoelectrochemical reactions are similar, at least in the number of holes needed to etch each SiC pair. The different porous morphologies obtained here are unlikely to be related to different chemical reactions. 

Zheng et al.60 have obtained the hole numbers at the Cu and O sites separately in the CuC>2 planes in various high-7 materials. They followed the analyses proposed by Hanzawa et al.61 and Ohta et al.62 from the NQR frequencies of Cu and l70, neglecting the contributions from outside of the positions of the atoms concerned. 

For the oxygen site, since T) is finite, holes should reside on more than one p-orbital. For the hole number n in the orbital in the a direction (a = x, y, z), we... 

The hole numbers thus obtained are shown in Table 2.60 The plausibility of these results is confirmed by the Van Vleck susceptibility which is given by... 

Aiorb oc Xvv is plotted against the hole numbers at the Cu site in Fig. 19.60 The points are approximately on a straight line intercepting the origin, which is consistent with the relation given by Eq. (23). 

Fig. 47. The spin Knight shift of Cu at T = 300 K. K f0K values perpendicular to the c-axis are plotted against the hole number in the CuC>2 plane, 6, obtained from vq60 in mono- and bi-layer cuprates. The solid line shows a linear relation between Aj°°K and 6, 6 = 0.0462 + 0.502AfOK(%).

The local hole numbers at the Cu and O sites in the Cu02 plane in high-Tc materials have been obtained from analysis of the NQR frequencies of Cu and nO. These hole numbers are correlated with several physical... 

Note finally that the above calculation is easily generalized if the ring is penetrated by a magnetic flux <. In this case, the electron and hole number operators should be shifted by flux-dependent constants, N a —> N l4>Q and N2a N2a — oe/4>0i where 0o is the flux quantum. This results in the replacement Sp - 5p(l — 2a /( o) in Eq. (36). 

In addition to these analyses, a comparison of measured and computed values of temperature and degree of saturation for some selected points of the mid plane of hole number 1 have been presented. The results show that despite the large amount of parameters and the difficulties in characterising those materials, the simulation can reproduce the main aspects of the processes involved, as, for instance, the wetting-drying cycles of the zone close to the heater. This effect has been simulated thanks to the consideration of the vapour flow in the system. This result is also consistent with other THM simulations performed in the context of radioactive waste disposal problems. 

For a binary gas mixture of electrons and holes, we define n and p as the electron and hole number densities, respectively, and also use the same letters as subscripts to represent the electron and hole components. Then we can write the charge Equation 5 for holes of charge +q, and electrons of charge -q, respectively ... 

Figure 11.18 shows the load distribution from the instrumented bolts for the C1 C1 C1 (all holes neat-fit) case and the C1 C1 C2 case (80 pm clearance in Hole 3 — see Figure 11.4 for hole numbering). Shown also are results from the three-dimensional finite element model where the agreement between the experimental and numerical results in terms of load distribution between the bolts is considered very good. 

The crosses in Figure 11.9 show the free volume for PC calculated from Eq. (11-5) and the determined o-Ps hole size (u/,). The specific hole number A was used as a fitting parameter. A constant value of A = 0.67 x 10 was sufficient for the temperature range between 300 and 570 K to get agreement between the free volumes estimated from = A (w ) and Vf = hV. The volume- elated hole density A = A /y varies with T. Therefore, the hole volume ( > cannot be scaled to the hole fraction h to determine Aft [Higuchi et al., 1995 Schmidt and Maurer, 2000b Kilbum et al., 2005]. 

The Specific hole number at Tg, of conventional polymers shows a linear increase with Tg (Figure 11.12b) from 0.2 to 0.8 in units of 10 g (for polymers of density 1, this corresponds to the same numbers in units of nm ). The fiuoropoly-mers show an almost constant hole density 0.2 x 10 corresponding to... 

Hole number The angle with roadway side (°) Elevation angle (°) Final hole length (m) Drilling projection in the roadway direction (m) Drilling vertical height (m) The distance of final hole projection with the roadway side (m)... 

The o-Ps intensity contains information on the number of free volume holes but, since o-Ps intensity can be affected by many physico-chemical factors, it cannot be uniquely associated with the former. If we know that only the number of free volume holes has been changed, we may correlate a change in the o-Ps intensity with the hole number with some confidence. The opposite does not hold we cannot a priori attribute a change in I3 to changes in the number of free volume holes unless we are sure that no other factors are playing an important role. This imposes some limitation on the applicability of o-Ps intensity with regard to the number of holes, but still it is of great importance. In the near future when we know much better about the mechanism of Ps... 

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