History of Magnetoconcentration Effect Research

A biased photoconductor under the influence of magnetoconcentration for the case of low magnetic fields was investigated by Malyutenko and Teslenko [397, 398]. They denoted the effects of Lorentz force to carriers in such a device the transversal sweep-out ( a semiconductor with induced anisotropy of conductivity ). Their work included both theoretical and experimental investigation, and the magnetic induction they utilized did not exceed 0.2 T. 

A magnetoconcentration detector is described by the set of equations (3.57) to (3.64). The continuity equations have the identical form to (3.65) and (3.66). Current density in the direction of the magnetic field is given by (3.59). Together with the electroneutrality equation (3.63) and (3.64) one obtains a second order differential equation for the minority carrier concentration. For n-type semiconductor this equation is 

3 Charge Carrier Management (Thermal Noise Engineering) 

The electron concentration n according to the electroneutrality equation and utilizing the above notation is 

The boundary conditions for the carrier transport equation in the magnetoconcentration detector are posed for the top and bottom surface, assuming that their surface recombination rates are described by the Shocldey-Read model, i.e., that S = 1/tno = 1/tpo- The second assumption often met in literature (e.g., [401]) is that the trap distribution function at the surface is always of Maxwell-Boltzmaim type (nondegenerate semiconductor). In that case Shockley-Read expression for recombination rate (1.70) becomes 

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