High-pressure solution growth

Compared to GaN on sapphire substrate, GaN on 6H-SiC tends to show a narrower XRC profile for both symmetrical and (10-10) diffraction as shown in TABLE 1. The narrowest figure was reported on bulk GaN grown by high pressure solution growth [15],... 

B1.1 High pressure solution growth of GaN and related compounds... 

J. Karpinski, J. Jun, S. Porowski, Equilibrium pressure of N2 overGaN and high pressure solution growth of GaN, J. Cryst. Growth 66 (1984) 1—10. 

Abbreviations used ACRT - Accelerated Crucible Rotation Technique, CZG - Czochralski Growth, EV Growth, HPS-High-pressure Solution Growth, HYG - Hydrothermal Growth, LPE-Liquid Phase Epitaxy. 

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