Heterojunction intrinsic thin layer

Heterojunction with intrinsic thin layer (HIT) photovoltaic cell, 23 46-47 Heteroleptic uranium complexes, 25 441 Heterologous promoters, 22 453 Heteronano interface (HNI), 23 838 Heteronium bromide, 4 359t Heteronuclear metal carbonyls, synthesis of, 26 69-71... 

Australia, and scaled up by BP Solar in Spain, the heterojunction with intrinsic thin layer (HIT) cells developed by Sanyo by replacing the diffused P-doped emitter with an amorphous silicon layer and the back contact cells developed by Stanford University for use in concentrator technology and now converted to a large area for flat plate use. All three use single-crystalline silicon, while the majority of screen-printed cells use multicrystalline silicon wafers. 

Sanyo s HIT heterojunction with intrinsic thin-layer) technology combines crystalline and amorphous silicon. n-Type crystalline silicon wafers have layers of intrinsic and doped amorphous silicon applied to the front and rear. Contacts are made via transparent conducting oxide (TCO). 

First, the drift current is calculated in the case of a constant electrical field, as one would expect for very thin bulk heterojunction solar cells. If the width W of the active layer is similar to the drift length of the carrier, the device will behave as a MIM junction, where the intrinsic semiconductor is fully depleted. The current is then determined by integrating the generation rate G = —dP/dx over the active layer, where P is the photon flux ... 

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