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Hall effect, mobility determined from

The mobility determined from the Hall effect is the intrinsic (i.e., trap-independent) mobility Po(7), even if a considerable trapping occurs in the channel. [Pg.53]

Figure 49. The mobility of the excess electrons in various SnCh samples determined by means of the Hall effect and conductivity. The high temperature behavior points to acoustic phonon scattering. Both samples differ in purity. According to Ref..155. (Reprinted from H. J. van Daal, Polar Optical-Mode Scattering of Electrons in SnC>2. , Solid State Commun. 6, 5-9. Copyright 1968 with permission from Elsevier.)... Figure 49. The mobility of the excess electrons in various SnCh samples determined by means of the Hall effect and conductivity. The high temperature behavior points to acoustic phonon scattering. Both samples differ in purity. According to Ref..155. (Reprinted from H. J. van Daal, Polar Optical-Mode Scattering of Electrons in SnC>2. , Solid State Commun. 6, 5-9. Copyright 1968 with permission from Elsevier.)...
The total donor concentration in sample B was = 3X10 cm 3 with a carrier mobility = 45,000 cm /V-sec at 77 K determined from Hall effect measurements. [Pg.248]

From the Hall data, the density of mobile carriers in the OFET s channel can be directly determined for the first time, without the assumptions regarding the gate-channel capacitance Q. Hall effect studies in other organic semiconductors (e.g., pentacene and tetracene) are highly desirable because most of the OFETs based on those materials still operate in the trap-dominated regime and the intrinsic mobilities at the surface of these semiconductors, To(7), are unknown. The Hall measurements, however, are complicated by a very high sheet resistance of the conduction channel typical for OFETs, which often exceeds 10 MO/square. For this reason, the first demonstration of the Hall effect appeared only recently, due to the high carrier mobility in rubrene [82,83]. [Pg.53]

K for a number of samples from each stmcture. Shubnikov-de Haas (SdH) oscillations and Hall effect were measured at 1.4-h1.2 K in magnetic fields up to 6 T in order to determine carrier densities N. No significant difference between the carrier densities of the two mesas in all samples was observed neither at P=0 nor under compression (Fig. la, Fig. 2a). Therefore, the anisotropy of the resistance can be fully ascribed to anisotropy of the corresponding mobilities. The mobilities in [1-... [Pg.211]

For some materials, it is on occasion desired to determine the material s majority charge carrier type, concentration, and mobility. Such determinations are not possible from a simple electrical conductivity measurement a Hall effect experiment must also be conducted. This Hall effect is a result of the phenomenon by which a magnetic field applied perpendicular to the direction of motion of a charged particle exerts a force on the particle perpendicular to both the magnetic field and the particle motion directions. [Pg.749]


See other pages where Hall effect, mobility determined from is mentioned: [Pg.335]    [Pg.175]    [Pg.407]    [Pg.53]    [Pg.553]    [Pg.127]    [Pg.635]    [Pg.65]    [Pg.370]    [Pg.63]    [Pg.232]   
See also in sourсe #XX -- [ Pg.53 ]




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