H-surfaces

The SiH radical physisorbs on tlie a-Si H surface and recombines tliere witli anotlier SiH radical to fonn disilane Si2 Hg, or abstracts H from tlie surface to fonn a dangling bond and SiH. The film growtli is detennined by tlie chemisoriDtion of tlie SiH radical on a free dangling bond site by fonnation of a Si-Si bond. The cross-linking of... [Pg.2806]

L ger, L., Raphael, E. and Hervet, H., Surface-anchored polymer chains their role in adhesion and friction. Adv. Polym. Sci., 138, 185-225 (1999). [Pg.242]

Heilman, R. H., Surface Heat Transmission, Trans. ASME, Euels, Steam Power,Y. 51, No. 257 (1929). [Pg.284]

Hultquist, G. and Her0, H. Surface Enoblement by Dissolution of Cu, Ag and Zn from Single Phase Gold Alloys , Corrosion Science, 24, 789-805 (1984)... [Pg.466]

Efrima, S. Eisenberg, H. Surface-Enhanced Raman Scattering (SERS) Physical Chemistry of Synthetic Polyelectrolytes 16... [Pg.602]

Hooke, C. J. and Venner, C. H., Surface Roughness Attenuation in Line and Point Contacts," Proc. Inst. Mech. Eng., PartJ J. Eng. Tribol., Vol. 214,2000, pp. 439-444. Morales-Espejel, G. E., Venner, C. H., and Greenwood, J. A., Kinematics of Transverse Real Roughness in Elastohydrody-namically Lubricated Line Contacts Using Fourier Analysis," Proc. Inst. Mech. Eng., PartJ.J. Eng. Tribol.,Vol.21A, No. J6,2000, pp. 523-534. [Pg.146]

Magonov, S.N., Whangbo, M.H., Surface Analysis with STM and APM, VCH, Weinheim, Germany... [Pg.604]

Mechanical/y hysiaxdienical Properties/ Propertiesr strentf h,/ surface area,... [Pg.66]

The plasma-wall interaction of the neutral particles is described by a so-called sticking model [136, 137]. In this model only the radicals react with the surface, while nonradical neutrals (H2, SiHa, and Si H2 +2) are reflected into the discharge. The surface reaction and sticking probability of each radical must be specified. The nature (material, roughness) and the temperature of the surface will influence the surface reaction probabilities. Perrin et al. [136] and Matsuda et al. [137] have shown that the surface reaction coefficient of SiH3 is temperature-independent at a value of = 0.26 0.05 at a growing a-Si H surface in a... [Pg.39]

For the SiH2 radicals the surface reaction coefficients have been taken as 5 = P = 0.8 [192]. This sticking coefficient is large because there is no barrier for insertion of this species into the a-Si H surface. Kae-Nune et al. [217] specify a surface recombination probability of about 1 for atomic hydrogen on an a-Si H surface during deposition that results mainly in recombination of H with an H-atom bounded to the surface. [Pg.40]

The recombination probability yij is defined as the probability that a neutral radical j reacts on the surface, forming a volatile stable product, i.e., a nonradical neutral i, which is reflected into the discharge (e.g. SiH3(gas) + H(surface) SiH4(gas)). This causes a flux into the discharge ... [Pg.48]

Nowadays, it is generally accepted that device quality a-Si H is obtained under PECVD conditions where the SiH radical is the predominant growth precursor [123, 137, 192]. At typical deposition temperatures and pressures the a-Si H surface is almost completely terminated by hydrogen atoms. The SiHj radical... [Pg.129]

FIG. 52. Schematic respresenlalion of the processes that a SiH3 may undergo at a hydrogen-terminated fl-Si H surface. (After J. Robertson, J Api>l. Phys. S7. 2608 (2000).]... [Pg.132]

L4ger, L, Raphael, E, Hervet, H. Surface-Anchored Polymer Chains Their Role in Adhesion and Friction. VoL 138 pp. 185-226. [Pg.212]

Ali, L. H. Surface-Active Agents in the Aqueous Phase of the Hot-Water Flotation Process for Oil Sands, Fuel, 1978, 57, 357. [Pg.407]

Chemical composition was determined by elemental analysis, by means of a Varian Liberty 200 ICP spectrometer. X-ray powder diffraction (XRD) patterns were collected on a Philips PW 1820 powder diffractometer, using the Ni-filtered C Ka radiation (A, = 1.5406 A). BET surface area and pore size distribution were determined from N2 adsorption isotherms at 77 K (Thermofinnigan Sorptomatic 1990 apparatus, sample out gassing at 573 K for 24 h). Surface acidity was analysed by microcalorimetry at 353 K, using NH3 as probe molecule. Calorimetric runs were performed in a Tian-Calvet heat flow calorimeter (Setaram). Main physico-chemical properties and the total acidity of the catalysts are reported in Table 1. [Pg.358]

Reather H., Surface Plasmons on Smooth and Rough Surfaces and on Gratings, Springer tracks in modem physics, Vol 111, Springer Verlag, Berlin (1983). [Pg.191]

Pettinger B., Wenning U., Wetzel H., Surface-plasmon enhanced Raman-scattering frequency and angular resonance of Raman scattered-light from pyridine on Au, Ag and Cu electrodes, Surf. Sci. 1980 101 409-416. [Pg.255]

Loo B.H., Surface-enhanced Raman-spectroscopy of platinum. 2. Enhanced light-scattering of chlorine adsorbed on platinum, J. Phys. Chem. 1983 87 3003-3007. [Pg.255]

Ample F, Duchemin I, Hliwa M, Joachim C (2011) Single OR-molecule and OR atomic circuit logic gates interconnected on Si(100)H surface. J Phys Condens Matter 23 125303... [Pg.267]

Bellec A, Riedel D, Dujardin G (2008) Dihydride dimer structures on the Si(100) H surface studied by low-temperature scanning tunneling microscopy. Phys Rev B 78 165302... [Pg.267]

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