Stability of H-Terminated SiNW Surfaces

Silicon-based technology requires the removal of the surface oxide layer, and the termination and stabilization of the Si surfaces. This is conventionally performed by dipping in HF, which not only removes the oxide layer, but provides H- 

These considerations initiated our FTIR study of the nature of the HF-dipped SiNWs and their stability upon exposure to air and to water. The SiNWs had a distribution of diameters from a few nm to tens of nm. The thickness of the oxide layer was about 1/4 to 1/3 of the nominal diameter. Micro ATR-FTIR was used to 

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