Group IVB 14 . Germanium, Tin, Lead

Various polymorphs have been reported for SnS with band gap widths in the range 1.0-1.5 eV, depending on the preparation method. The a-SnS (herzenbergite) is the most frequently occurring phase and is a p-type semiconductor with a direct optical transition at 1.3 eV and a high absorption coefficient ( 10 cm ). The orthorhombic S-SnS phase possesses a direct gap between 1.05 and 1.09 eV. 

The lead compounds PbS, PbSe, PbTe are narrow-gap semiconductors that have been widely investigated for infrared detectors, diode lasers, and thermo-photovoltaic energy converters. Their photoconductive effect has been utilized in photoelectric cells, e.g., PbS in photographic exposure meters. Integrated photonic devices have been fabricated by their heteroepitaxial growth on Si or III-V semiconductors. 

Lead(II) sulfide occurs widely as the black opaque mineral galena, which is the principal ore of lead. The bulk material has a band gap of 0.41 eV, and it is used as a Pb ion-selective sensor and IR detector. PbS may become suitable for optoelectronic applications upon tailoring its band gap by alloying with II-VI compounds like ZnS or CdS. Importantly, PbS allows strong size-quantization effects due to a high dielectric constant and small effective mass of electrons and holes. It is considered that its band gap energy should be easily modulated from the bulk value to a few electron volts, solely by changing the material s dimensionality. 

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